Allicdata Part #: | BF259-ND |
Manufacturer Part#: |
BF259 |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | STMicroelectronics |
Short Description: | TRANS NPN 300V 0.1A TO-39 |
More Detail: | Bipolar (BJT) Transistor NPN 300V 100mA 90MHz 5W T... |
DataSheet: | BF259 Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
Series: | -- |
Packaging: | Bulk |
Part Status: | Obsolete |
Transistor Type: | NPN |
Current - Collector (Ic) (Max): | 100mA |
Voltage - Collector Emitter Breakdown (Max): | 300V |
Vce Saturation (Max) @ Ib, Ic: | 1V @ 6mA, 30mA |
Current - Collector Cutoff (Max): | 50nA (ICBO) |
DC Current Gain (hFE) (Min) @ Ic, Vce: | 25 @ 30mA, 10V |
Power - Max: | 5W |
Frequency - Transition: | 90MHz |
Operating Temperature: | 200°C (TJ) |
Mounting Type: | Through Hole |
Package / Case: | TO-205AD, TO-39-3 Metal Can |
Supplier Device Package: | TO-39 |
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BF259 is a type of bipolar junction transistor (BJT) that belongs to single type transistors. It is a highly reliable, low noise transistor for RF amplifier applications. The device is available in TO-92 plastic package which contains three pins respectively for base, collector, and emitter. The BF259 has several beneficial features such as high gain linearity, wide operating temperature range, low power consumption, and ample breakdown voltage.
The most important benefit that this transistor offers is its high gain linearity. This makes it ideal for use in radio frequency (RF) amplifying applications. The gain linearity also guarantees excellent performance even at high temperatures. This is especially important when transistors are used in heat-sensitive circuits.Provided below is the main information about this device.
- Configuration: Single type-Bipolar junction transistor (BJT)
- Package: TO-92
- Pin Configuration: Base, Collector, Emitter
- Application Fields: RF amplifiers
The working principle of the BF259 is easy to understand. The transistor has two inputs, namely emitter and base. When a voltage is applied to the base input, it activates a voltage gain, also known as the multiplier effect. This multiplier effect amplifies the base input and allows it to influence the emitter current. The emitter then emits a current that is proportional to the applied voltage. Thus, the transistor acts as an amplifier to increase the amplitude of the incoming signal. The device is also capable of offering large breakdown voltages and high operating temperature ranges.
The BF259 is capable of operating efficiently, regardless of the surrounding environment. This makes it an ideal transistor for industrial applications. As it is a single-type BJT, it works independently and does not need a second transistor for operation. The device has a low power consumption, which makes it a reliable and cost-effective choice for any application.
In addition to its linearity, other beneficial features of the BF259 include low noise and high gain band. The base-emitter capacitance is also low to ensure that there is minimum distortion in the system. The device also has a low collector-emitter saturation voltage, making it an ideal choice for power amplifying applications. The device also offers a wide operating temperature range, making it suitable for use in a variety of industrial environments.
The BF259 is a highly reliable and low noise transistor that is suitable for RF amplifier applications. It offers a high linearity and superior performance even at high temperatures. It has low power consumption and wide operating temperature range. It also provides low noise, low base-emitter capacitance, and low collector-emitter saturation voltage. The device is most suitable for industrial applications due to its versatility and reliability.
The specific data is subject to PDF, and the above content is for reference
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