Allicdata Part #: | BF256C-ND |
Manufacturer Part#: |
BF256C |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | ON Semiconductor |
Short Description: | JFET N-CH 30V 18MA TO92 |
More Detail: | RF Mosfet N-Channel JFET TO-92-3 |
DataSheet: | BF256C Datasheet/PDF |
Quantity: | 1000 |
Series: | -- |
Packaging: | Bulk |
Part Status: | Obsolete |
Transistor Type: | N-Channel JFET |
Frequency: | -- |
Gain: | -- |
Current Rating: | 18mA |
Noise Figure: | -- |
Power - Output: | -- |
Voltage - Rated: | 30V |
Package / Case: | TO-226-3, TO-92-3 (TO-226AA) |
Supplier Device Package: | TO-92-3 |
Base Part Number: | BF256 |
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The BF256C can be classified as an RF MOSFET and is one of the most commonly used transistors in commercial, industrial, and research applications. Its features make it an excellent choice for a variety of designs. The following discussion outlines the application field and working principle of the BF256C.
Application Field
The BF256C has a number of applications. It is often used as an amplifier in high-frequency applications and for radio frequency (RF) switching. It is especially useful in low-power devices, such as portable electronics, as it has an exceptionally low on-state resistance. Other applications of the BF256C include functions such as frequency control, modulation, and power gating in radio transmitters and receivers. The BF256C is also well-suited to temperature sensor and low-noise amplifier circuits.
Working Principle
The BF256C is a field-effect transistor (FET) and is designed to work based on the concepts of MOSFET (metal-oxide-semiconductor field-effect transistor) technology. In the simplest terms, a MOSFET is a type of transistor where the output voltage is dependent on the input voltage and gate voltage. The gate voltage is then used to control the flow of current between the source and drain terminals.
The BF256C is also a radio frequency (RF) MOSFET. This means that it has an extremely low noise figure and is capable of handling frequencies up to 200 MHz. It has a P-Channel junction, meaning that it has an on-state resistance of 2.1 ohms and an off-state resistance of 500 megohms.
The BF256C also has the ability to withstand high-power. It has an on-state drain-source breakdown voltage of 26 V and an off-state drain-source breakdown voltage of 500 V. It is also capable of operating at temperatures as high as 175°C.
In conclusion, the BF256C is an RF MOSFET that is highly versatile and reliable. Its features make it an excellent choice for a variety of applications, such as amplifiers, switches, frequency control, and power gating. It has a low on-state resistance, an exceptionally low noise figure, and can operate at high frequencies and temperatures. It is also capable of handling high-power without fail.
The specific data is subject to PDF, and the above content is for reference
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