Allicdata Part #: | BF256A-ND |
Manufacturer Part#: |
BF256A |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | ON Semiconductor |
Short Description: | JFET N-CH 30V 7MA TO92 |
More Detail: | RF Mosfet N-Channel JFET 800MHz 11dB TO-92-3 |
DataSheet: | BF256A Datasheet/PDF |
Quantity: | 1000 |
Series: | -- |
Packaging: | Bulk |
Part Status: | Obsolete |
Transistor Type: | N-Channel JFET |
Frequency: | 800MHz |
Gain: | 11dB |
Current Rating: | 7mA |
Noise Figure: | -- |
Power - Output: | -- |
Voltage - Rated: | 30V |
Package / Case: | TO-226-3, TO-92-3 (TO-226AA) |
Supplier Device Package: | TO-92-3 |
Base Part Number: | BF256 |
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BF256A belongs to the family of Field-Effect Transistors (FETs), and is a kind of metal-oxide semiconductor field-effect transistor (MOSFET), which is used in radio frequency (RF) devices. It is suitable for use from low power to high power device applications, with different configurations able to offer very low “ON” resistance. It comprises of drain, source and gate, offering low power consumption and high switching speed, allowing for higher switching frequencies.
The application field of the BF256A is in applications that require high transconductance, such as voltage-controlled amplifiers (VCAs), instrumentation amplifiers, and charge pumps. It is also used in low noise to moderately high frequency RF applications, such as low noise amplifiers (LNAs), amplifiers and voltage controlled oscillators (VCOs). BF256A is also utilized in RF mixers, provide a good option for amplifier and switching applications.
The BF256A has a high degree of operational flexibility and is available as an N-channel depletion MOSFET. It has a drain-source (D-S) maximum voltage rating of 30V and a gate-source (G-S) maximum voltage of -7V. This allows the device to be used in various topologies, ranging from Common source to Common drain and Common gate.
The working principle of the BF256A is based on the concept of field-effect transistor (FET), where the control of the current flow is based on the potential on the gate. Since the gate of the BF256A is insulated from the main two terminals (source and drain), a small voltage can be applied on the gate terminal, controlling the current flow through the device. This allows for quick switching, with no delay, since the gate voltage can be applied quickly.
Apart from this, the gate voltage has the capability to control the current flow; a small gate voltage change can cause a large change in the current flow, allowing for fine current control for applications that require low power. This makes the device suitable for use in low power devices, as the gate voltage does not have to be increased significantly in order to control the current flow. This improves the power efficiency of the device.
The BF256A is also equipped with a good source-drain breakdown voltage, allowing for higher currents to flow, making it suitable for use in high power applications. The device can handle currents well up to 2A, allowing for improved power capabilities in amplifiers and switches.
The BF256A also has excellent thermal characteristics, allowing it to operate over wide temperature ranges. This makes it suitable for use in most applications that require reliable operation over a wide temperature range. It also provides good signal integrity, allowing for improved signal quality in applications that require high frequency signals.
Due to its many advantages, the BF256A has become widely used in various applications, ranging from low power to high power applications, allowing for improved operational efficiency and dependability. It is used widely in various RF and low noise applications, and offers improved performance over other similar devices. The BF256A is an excellent modulation device, making it ideal for use in switched-mode power supplies and other high-frequency applications.
The specific data is subject to PDF, and the above content is for reference
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