BF256AG

Series:	--
Packaging:	Bulk
Part Status:	Obsolete
Transistor Type:	N-Channel JFET
Frequency:	800MHz
Gain:	11dB
Current Rating:	7mA
Noise Figure:	--
Power - Output:	--
Voltage - Rated:	30V
Package / Case:	TO-226-3, TO-92-3 (TO-226AA)
Supplier Device Package:	TO-92-3
Base Part Number:	BF256

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IntroductionThe BF256AG is a unique device in the world of RF transistors. It is a high power, low noise, field-effect transistor (FET). It is used in a wide range of applications, from RF amplifiers and oscillators in transceivers, to power amplifiers in audio amplifiers, and other high frequency applications.The unique feature of this FET is its ability to provide a very high gain with a low noise figure and excellent thermal stability. It offers the designer a choice of different configurations and bias conditions, based upon the particular application.Application fieldThe BF256AG is widely used for RF designs ranging from VHF and UHF circuits, to cellular and wireless services. Its primary purpose is for low noise, power amplifiers and other high frequency applications. Its excellent linearity and wide dynamic range are key features for wireless communication.The device is ideal for use in amplifiers and oscillators in transceivers. It can be used in RF amplifiers, cellular base stations, transmitters, directional couplers and other RF circuit designs. It even has applications in audio amplifiers, providing low noise and high power at the same time.Another use for the device is in microwave systems. Its low noise and low power requirements make it suitable for use in a variety of microwave applications, including ground and air systems, active antenna systems, and PTZ (pan/tilt/zoom) cameras.Finally, the BF256AG can be used in RF broadcast applications, such as TV receivers, satellite receivers and digital radio receivers. In these types of applications, the device can be used for low noise, wide bandwidth and high power levels.Working principleThe BF256AG operates on the principle of field-effect transistor (FET) technology. A FET operates on the principle of a gate voltage controlling the current flow in the channel region between the source and the drain terminals.The FET is a three-terminal device, with the source, gate and drain terminals controlling current flow between them. The gate electrode is a metal plate placed in the path of the electrons flowing between the source and drain. By applying a voltage to the gate, the electron flow is altered via the free electron population in the channel region.The BF256AG employs a low noise process, which minimizes thermal variance between devices by using a low noise substrate. The device is also specified to provide high gain linearity and wide dynamic range.ConclusionThe BF256AG is an excellent choice for a variety of RF designs, including amplifiers and oscillators in transceivers, cellular base stations, transmitters, directional couplers and microwave systems, as well as being used in broadcast applications. It offers excellent gain, low noise and wide dynamic range with good thermal stability. The FET is also a simple, three-terminal device, controlled by an applied gate voltage.

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