Allicdata Part #: | BF256B_J35Z-ND |
Manufacturer Part#: |
BF256B_J35Z |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | ON Semiconductor |
Short Description: | JFET N-CH 30V 13MA TO92 |
More Detail: | RF Mosfet N-Channel JFET TO-92-3 |
DataSheet: | BF256B_J35Z Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
Series: | -- |
Packaging: | Bulk |
Part Status: | Obsolete |
Transistor Type: | N-Channel JFET |
Frequency: | -- |
Gain: | -- |
Current Rating: | 13mA |
Noise Figure: | -- |
Power - Output: | -- |
Voltage - Rated: | 30V |
Package / Case: | TO-226-3, TO-92-3 (TO-226AA) (Formed Leads) |
Supplier Device Package: | TO-92-3 |
Base Part Number: | BF256 |
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The BF256B_J35Z is a N-Channel Junction Field Electron Transistor (JFET) commonly used for applications in high-frequency radio frequency (RF) circuits. Its particular suitability for RF circuits is due to its exceptionally low noise performance – as low as 0.2 dB – and its extremely high input impedance of more than 10 MΩ. As such, it is particularly well-suited for use in circuits such as mixers and amplifiers, where low levels of noise, low distortion and high levels of input impedance are required for optimal operation.
The BF256B_J35Z is a depletion-mode JFET, meaning that, in the absence of any external voltage applied to its gate terminal, the drain current is active and is controlled by the applied voltage between the source and gate. In practical terms, this means that the drain current is lowered when a negative voltage is applied to the gate terminal. As the voltage reduces further, it reaches a certain point at which all drain current is blocked and the device is said to be in cutoff mode.
The maximum voltage that can be applied to the gate of the BF256B_J35Z is ± 20 volts, and the maximum drain current is 20 mA, which is relatively low compared to other types of FETs. This is because the device is designed for use in RF circuits and hence its maximum current rating is limited. The maximum frequency at which the device can be used is in the region of 1 GHz – again, this is because it is intended to be used in radio-frequency applications.
Another important characteristic of the BF256B_J35Z is its small package size – less than 1mm³ – making it an ideal choice for use in applications where space is at a premium. It also has a very low thermal resistance, enabling it to be used in environments where high temperatures are encountered. Its low power consumption (less than 200 µW) makes it a particularly good choice for battery-powered applications.
The BF256B_J35Z is typically used in applications such as amplifiers, mixers, oscillators, and impedance matching networks. Its high input impedance and low noise performance make it well-suited for use in these applications. Its small package size, low power consumption and high operation frequency also make it an attractive choice in many other applications, such as in medical instrumentation, test and measurement equipment, and in wireless communication systems.
In conclusion, the BF256B_J35Z is a particularly useful device for use in high-frequency radio frequency (RF) circuits. Its exceptional low noise performance, high input impedance, small package size and low power consumption make it an ideal choice for many different applications, ranging from amplifiers and mixers to oscillators and impedance matching networks.
The specific data is subject to PDF, and the above content is for reference
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