Allicdata Part #: | 568-1981-2-ND |
Manufacturer Part#: |
BFG424F,115 |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | NXP USA Inc |
Short Description: | TRANS NPN 4.5V 25GHZ SOT343 |
More Detail: | RF Transistor NPN 4.5V 30mA 25GHz 135mW Surface Mo... |
DataSheet: | BFG424F,115 Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
Series: | -- |
Packaging: | Tape & Reel (TR) |
Part Status: | Obsolete |
Transistor Type: | NPN |
Voltage - Collector Emitter Breakdown (Max): | 4.5V |
Frequency - Transition: | 25GHz |
Noise Figure (dB Typ @ f): | 0.8dB ~ 1.2dB @ 900MHz ~ 2GHz |
Gain: | 23dB |
Power - Max: | 135mW |
DC Current Gain (hFE) (Min) @ Ic, Vce: | 50 @ 25mA, 2V |
Current - Collector (Ic) (Max): | 30mA |
Operating Temperature: | 150°C (TJ) |
Mounting Type: | Surface Mount |
Package / Case: | SOT-343 Reverse Pinning |
Supplier Device Package: | 4-SO |
Base Part Number: | BFG424 |
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This article will focus on the BFG424F-115 transistor, which is a bipolar junction transistor (BJT) commonly used in radio frequency (RF) applications. This type of transistor is designed for use in RF amplifiers and oscillators, with reasonable gain performance and low noise operation.
The transistor features NPN silicon construction and uses a bipolar junction technology, with the ability to operate up to 18 GHz frequencies. It has a maximum power of 225 mW and an operating voltage range of 9 to 12 volts. The package style is a surface mount with a lead-free, low-noise, snubberless base.
BFG424F-115 transistors use a special process to ensure low parasitics and low noise which results in higher gain up to 25 dB at 18 GHz. The common-base current gain of this transistor is 40 to 45 decibels at 15 GHz, and is 50 decibels at 10 GHz. It offers a high ouput power of up to 4 W and input/output impedance of 50Ω.
The transistor utilizes an NPN structure, meaning an N-type semiconductor layer is sandwiched between two P-type semiconductor layers. This makes the bipolar junction transistor an ideal component for controlling current in both switching and linear applications. The ability to control current flow allows BJTs to perform amplification, switching, signal conditioning, oscillator, and power supply tasks.
In RF applications, BJTs are combined with resistors, inductors, and capacitors to form circuits that have various active and passive mixer stages. Active mixers, such as the BFG424F-115 transistor, offer better signal-to-noise ratio than passive mixers as they amplify the signal as well as provide it with gain. The transistor can be used in voltage-controlled amplifiers (VCAs) which are commonly used in radio broadcasting, broadcast video, RF systems, and cellular base station applications.
To summarize, the BFG424F-115 transistor is a bipolar junction transistor designed for use in radio frequency (RF) applications. It has a maximum power of 225 mW, a maximum gain of 25 dB at 18 GHz, and provides a maximum output power of 4 W. It utilizes NPN structure and is used in active mixer stages and voltage-controlled amplifiers. Its low parasitics and low noise enable it to operate in high frequency spans, making it a reliable component in RF applications.
The specific data is subject to PDF, and the above content is for reference
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