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Transistors - Bipolar (BJT) - RF

The BFG424W, 115 is a medium power Gallium Arsenide Heterojunction Bipolar Transistor (HBT). It belongs to a family of RF transistors that share a common structure, and are developed using the same process of wafer fabrication. The BFG424W, 115 is designed for high frequency, high power applications such as power amplifiers and active mixers, and is suitable for mobile radios, PDAs, cordless phones, and Wi-Fi modules.

Structure

The BFG424W, 115 is composed of a Layer Barrier Schottky Collector (LB_SC) that is attached to the emitter-base region with an isolating groundplane. The circuit consists of the LB_SC, a PN junction, and the emitter-base region. The huge current gain of the device is a result of the strongly electrostatically coupled layers within the LB_SC, and the low base resistance. This allows the device to pass high frequency signals without suffering significant losses, making it ideal for high power applications.

Performance

The BFG424W, 115 has a high frequency range up to 3Ghz, a high power capability of up to 4 Watts, and a voltage range from 4V to 25V. The device can operate at high temperatures, from -55°C to 150°C. It has a low noise figure and high linearity, which makes it an ideal solution for high power RF applications.

Working Principle

The BFG424W, 115 uses a process of wafer fabrication, which allows the bipolar transistor to be formed from three regions: collector, base, and emitter. These regions can be formed using very small processing steps and the result is a highly integrated high power device. When a voltage is applied to the emitter-base junction, electrons can tunnel into the base region. The base region concentrates the majority of the electrons to the collector region, allowing the current to flow. This is called the collector-base doping effect, and is effectively used as a gain factor in high frequency amplifiers.

Applications

The BFG424W, 115 is ideal for high power RF applications, such as power amplifiers, active mixers, cellular base stations, RF transceivers, satellite communication systems, and Wi-Fi modules. Its high gain, low noise figure, and linearity make it a reliable solution for these applications. It can also be used in LNAs, MMICs, and WiMAX systems.

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