Allicdata Part #: | BFG480W,135-ND |
Manufacturer Part#: |
BFG480W,135 |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | NXP USA Inc |
Short Description: | TRANS RF NPN 21GHZ 4.5V SOT343 |
More Detail: | RF Transistor NPN 4.5V 250mA 21GHz 360mW Surface M... |
DataSheet: | BFG480W,135 Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
Series: | -- |
Packaging: | Tape & Reel (TR) |
Part Status: | Obsolete |
Transistor Type: | NPN |
Voltage - Collector Emitter Breakdown (Max): | 4.5V |
Frequency - Transition: | 21GHz |
Noise Figure (dB Typ @ f): | 1.2dB ~ 1.8dB @ 900MHz ~ 2GHz |
Gain: | 16dB |
Power - Max: | 360mW |
DC Current Gain (hFE) (Min) @ Ic, Vce: | 40 @ 80mA, 2V |
Current - Collector (Ic) (Max): | 250mA |
Operating Temperature: | 150°C (TJ) |
Mounting Type: | Surface Mount |
Package / Case: | SC-82A, SOT-343 |
Supplier Device Package: | CMPAK-4 |
Base Part Number: | BFG480 |
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BFG480W,135 is a high power NPN silicon RF transistor designed specifically for C and X band applications such as wideband amplifiers and narrow-band amplifiers. It has excellent linearity performance, making it suitable for many high performance applications. FET technology extends its application field to higher frequencies, enabling applications such as switch mode power amplifiers.
Application Field
The BFG480W,135 is capable of operating at frequencies up to and exceeding 12GHz. As such, it is ideal for use in a wide range of RF applications such as power amplifiers, wideband amplifiers, narrow-band amplifiers, C band amplifiers, X band amplifiers and switch mode power amplifiers. It is also suitable for applications such as ultra-broadband low noise microwave amplifiers, LNA circuits, and active filters.
Working Principle
The BFG480W,135 utilizes the NPN silicon RF transistor. In an NPN transistor, the base carries current - it itself is not a current carrying component. As current is applied to the base, it ‘turns on’ the transistor, causing current to flow from the collector to the emitter. When current stops flowing to the base, the transistor is ‘turned off’, and no current is flowing from the collector to the emitter. As such, this transistor operates as an on/off switch.
The BFG480W,135 has two separate and distinct possibilities for signal input signals--either via logic level switching or voltage-controlled signal strength. Using logic level switching, the power gain of the transistor can be fully adjusted from 0 to 100%, allowing for precise control of the output signal. In voltage-controlled operation, the gain of the transistor is linearly adjustable to give a precise voltage controlled signal strength.
Advantages
The BFG480W,135 offers many advantages over other transistors. It has a high power-handling capability, a high frequency response and good linearity performance. It can also operate with a wide range of bias currents and supply voltages, making it suitable for a variety of applications. Furthermore, it is also highly reliable and is built with a rugged ceramic flame-proof package.
Disadvantages
Although the BFG480W,135 has many advantages, it also has a few disadvantages. One such disadvantage is that it has relatively high power consumption. This is largely due to the transistor’s high power rating, but it does mean that if power consumption is an issue, then other transistors may be more suitable.
Conclusion
The BFG480W,135 is a high power NPN silicon RF transistor designed specifically for C and X band applications. It has excellent linearity performance, making it suitable for many high performance applications. It is also highly reliable, and can be used for a wide range of RF applications. The BFG480W,135 does have relatively high power consumption, however, so if power consumption is an issue then other transistors may be more suitable.
The specific data is subject to PDF, and the above content is for reference
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