BFG425W,115

Series:	--
Packaging:	Tape & Reel (TR)
Part Status:	Obsolete
Transistor Type:	NPN
Voltage - Collector Emitter Breakdown (Max):	4.5V
Frequency - Transition:	25GHz
Noise Figure (dB Typ @ f):	0.8dB ~ 1.2dB @ 900MHz ~ 2GHz
Gain:	20dB
Power - Max:	135mW
DC Current Gain (hFE) (Min) @ Ic, Vce:	50 @ 25mA, 2V
Current - Collector (Ic) (Max):	30mA
Operating Temperature:	150°C (TJ)
Mounting Type:	Surface Mount
Package / Case:	SC-82A, SOT-343
Supplier Device Package:	CMPAK-4
Base Part Number:	BFG425

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Introduction to the BFG425W, 115 Transistor

The BFG425W, 115 transistor is a type of BJT (bipolar junction transistor) used in radio frequency (RF) applications. It is a unique type of BJT that has an especially high power gain and low noise characteristics, making it an ideal choice for high frequency amplifiers and applications in wireless communication systems.The BFG425W, 115 is a specialty type of transistor that is marketed by Toshiba Corporation, specifically designed for the radio frequency (RF) market. This BJT has a wide operating temperature range from -55°C to +150°C, along with a very high maximum collector current of 15A and a high voltage rating of 65V. The power gain of the BFG425W,115 is exceptional; it can achieve a nominal gain of 43dB at 1.4 GHz, making it suitable for RF power amplifier applications.

Construction and Working Principle

The BFG425W, 115 is constructed of three with layers of silicon. At the center is the base layer, which consists of a lightly-doped P-type silicon layer with a heavily-doped N-type layer sandwiching it on either side. This construction creates an electrical junction between the two layers of silicon. This junction serves as the key part of this type of BJT\'s operation. When an electrical current is applied to the junction, it causes electrons to cross over from the N-type layer and enter into the P-type layer. This in turn creates an unstable electron-hole (eh) pairing. As more electrons are added to the P-type side, the voltage across the junction increases until it reaches a point at which the P-type layer is saturated, and starts to conduct more current. This creates an amplification effect, as the current on the output side is much greater than that on the input side.

Application Fields

The BFG425W, 115 transistor is most commonly used in RF amplifier circuits, especially those that require high power output and low noise. It is also suitable for applications in wireless communication systems, such as cell phones and Wi-Fi, as well as for RF control and sensing applications. The BFG425W, 115\'s high power gain and low noise characteristics also make it a suitable choice for RF power amplifiers. For example, it can be used as a power amplifier in a television broadcasting system, or as part of a high-power RF transmitter. Additionally, it is commonly used in radar systems, both for transmitting and receiving purposes.

Conclusion

The BFG425W, 115 transistor is a high-power RF BJT (bipolar junction transistor) designed specifically for applications requiring high power output and low noise. Its wide temperature range and high voltage rating, along with its exceptionally high power gain and low noise characteristics, make it an ideal choice for many RF applications, such as cell phones, Wi-Fi, television broadcasting systems, radar systems, and other high-power RF transmitter and receiver products.

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