Allicdata Part #: | 568-1982-2-ND |
Manufacturer Part#: |
BFG480W,115 |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | NXP USA Inc |
Short Description: | TRANS NPN 4.5V 21GHZ SOT343R |
More Detail: | RF Transistor NPN 4.5V 250mA 21GHz 360mW Surface M... |
DataSheet: | BFG480W,115 Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
Series: | -- |
Packaging: | Tape & Reel (TR) |
Part Status: | Obsolete |
Transistor Type: | NPN |
Voltage - Collector Emitter Breakdown (Max): | 4.5V |
Frequency - Transition: | 21GHz |
Noise Figure (dB Typ @ f): | 1.2dB ~ 1.8dB @ 900MHz ~ 2GHz |
Gain: | 16dB |
Power - Max: | 360mW |
DC Current Gain (hFE) (Min) @ Ic, Vce: | 40 @ 80mA, 2V |
Current - Collector (Ic) (Max): | 250mA |
Operating Temperature: | 150°C (TJ) |
Mounting Type: | Surface Mount |
Package / Case: | SC-82A, SOT-343 |
Supplier Device Package: | CMPAK-4 |
Base Part Number: | BFG480 |
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Introduction
BFG480W,115 is a type of bipolar field effect transistor (BJT) that is usedin RF applications. It is widely used in switching and amplification applications which require both narrow bandwidth and high linearity. In addition, it also has good characteristics of low noise, low power dissipation, and low cost. This makes BFG480W,115 very attractive for any designer looking to build a reliable RF system.
Applications
BFG480W,115 are used in RF applications mainly because of its high linearity and narrow bandwidth characteristics. It is typically used for switching, amplification and for low noise in high frequency applications. Its high gain and narrow bandwidth make it suitable for high frequency applications where low power dissipation and high linearity are desired. BFG480W,115 is also widely used in transceiver design where it is used to amplify and switch between different frequency bands. It is also suitable for directional antennas as its high gain and good linearity make it an ideal choice.
Working Principle
The working principle of BFG480W,115 is based on using the voltage across the transistor’s base-emitter junction to control the collector current. This voltage is a representation of the input signal, which is then used to control the current flowing through the transistor. This is what gives BJTs their high linearity and narrow bandwidth. It also has the advantage of giving very high input impedances and low output resistances. The combination of these two components makes BFG480W,115 ideal for many design applications.
Advantages
BFG480W,115 provide a wide range of advantages over traditional BJTs. These include low noise, low power dissipation, good linearity and narrow bandwidth. The fact that it has a high input impedance and low output resistance also makes it well-suited for high frequency applications. In addition, BFG480W,115 also has the advantage of being able to operate at very low voltages, making it suitable for many battery-powered applications.
Disadvantages
Despite its wide range of advantages, BFG480W,115 also has some drawbacks. These include the fact that it is not as powerful as some other types of bipolar transistors, and the high input capacitance can require additional circuitry for matching purposes. In addition, the low power dissipation and low output resistance can make it more difficult to use for switching and amplification in some circuits.
Conclusion
BFG480W,115 is a type of bipolar field effect transistor that is used mainly in RF applications. It is widely used for switching and amplification applications due to its high linearity and narrow bandwidth characteristics. The fact that it has a high input impedance and low output resistance also makes it ideal for high frequency applications. The disadvantages include not having as much power as other BJTs, and the high input capacitance, which requires additional matching components. Nevertheless, BFG480W,115 is a reliable and attractive option for any designer looking to build a RF system.
The specific data is subject to PDF, and the above content is for reference
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