Allicdata Part #: | BFR340FH6327XTSA1TR-ND |
Manufacturer Part#: |
BFR340FH6327XTSA1 |
Price: | $ 0.07 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Infineon Technologies |
Short Description: | TRANS RF NPN 9V 20MA 3TSFP |
More Detail: | RF Transistor NPN 9V 20mA 14GHz 75mW Surface Mount... |
DataSheet: | BFR340FH6327XTSA1 Datasheet/PDF |
Quantity: | 1000 |
3000 +: | $ 0.06158 |
6000 +: | $ 0.05816 |
15000 +: | $ 0.05303 |
30000 +: | $ 0.04961 |
75000 +: | $ 0.04447 |
Series: | -- |
Packaging: | Tape & Reel (TR) |
Part Status: | Active |
Transistor Type: | NPN |
Voltage - Collector Emitter Breakdown (Max): | 9V |
Frequency - Transition: | 14GHz |
Noise Figure (dB Typ @ f): | 0.9dB ~ 1.2dB @ 100MHz ~ 2.4GHz |
Gain: | 13dB ~ 28dB |
Power - Max: | 75mW |
DC Current Gain (hFE) (Min) @ Ic, Vce: | 90 @ 5mA, 3V |
Current - Collector (Ic) (Max): | 20mA |
Operating Temperature: | 150°C (TJ) |
Mounting Type: | Surface Mount |
Package / Case: | SOT-723 |
Supplier Device Package: | PG-TSFP-3 |
Base Part Number: | BFR340 |
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RF transistors provide the technology needed to support the transmission and reception of radio frequency signals which is why they are found in nearly all radio transmitter and receiver system designs. In this article, we will discuss the application field and working principle of BFR340FH6327XTSA1, a popular NPN-type silicon-based RF transistor.
The BFR340FH6327XTSA1 is specifically designed for high performance, low noise and linearity applications in the ultra high frequency (UHF) band, making it an ideal choice for a wide array of applications such as UHF TV broadcast transmitters, commercial FM transmitters and receivers, microwave point-to-point transmission systems. Additionally, the device is also suitable for transmitting and receiving applications in point-to-multipoint communication systems, two-way radio and cellular radio.
The BFR340FH6327XTSA1 belongs to a class of NPN-type silicon-based transistors referred to as BJT. It is composed of three layers: the base, the emitter and the collector. The base layer is a single rectangular layer of semiconductor material that is lightly doped with boron. The emitter layer is heavily doped with phosphorus, while the collector layer is heavily doped with an opposite type of semiconductor material, such as arsenic. When current is applied to the base layer, the electrons in the base layer move to the collector, allowing the flow of current from the emitter to the collector. This current flow is then amplified by the device and can be further utilized for applications such as radio broadcasting or satellite communication.
The BFR340FH6327XTSA1 has a low noise performance of only 0.5 dB, which is the major benefit of using this type of transistor for most RF applications. Furthermore, the device is also designed with a high linearity in order to reduce unwanted signal distortion. It also has an integrated wide-band matching network in order to further reduce signal distortion. As a result, the BFR340FH6327XTSA1 can accurately receive and transmit signals even at the far ends of the UHF band.
In summary, the BFR340FH6327XTSA1 is an ideal choice for a wide array of applications in the UHF band. Its low noise performance, low distortion and wide-band matching network make it an ideal choice for radio and television broadcasting, two-way radio and cellular communications. Its integrated features also make it suitable for microwave point-to-point transmission systems and point-to-multipoint communication systems.
The specific data is subject to PDF, and the above content is for reference
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