Allicdata Part #: | 568-6204-2-ND |
Manufacturer Part#: |
BFR31,215 |
Price: | $ 0.15 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | NXP USA Inc |
Short Description: | JFET N-CH 10MA 250MW SOT23 |
More Detail: | JFET N-Channel 10mA 250mW Surface Mount SOT-23 (T... |
DataSheet: | BFR31,215 Datasheet/PDF |
Quantity: | 3000 |
3000 +: | $ 0.13184 |
Series: | -- |
Packaging: | Tape & Reel (TR) |
Part Status: | Active |
FET Type: | N-Channel |
Drain to Source Voltage (Vdss): | 25V |
Current - Drain (Idss) @ Vds (Vgs=0): | 1mA @ 10V |
Current Drain (Id) - Max: | 10mA |
Voltage - Cutoff (VGS off) @ Id: | 2.5V @ 0.5nA |
Input Capacitance (Ciss) (Max) @ Vds: | 4pF @ 10V |
Power - Max: | 250mW |
Operating Temperature: | 150°C (TJ) |
Mounting Type: | Surface Mount |
Package / Case: | TO-236-3, SC-59, SOT-23-3 |
Supplier Device Package: | SOT-23 (TO-236AB) |
Base Part Number: | BFR31 |
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Introduction
The BFR31,215 is the world’s first bipolar junction transistor (BJT) to employ an integral field effect transistor (FET). A FET or field effect transistor is a semiconductor device similar to a BJT that allows electric current to be controlled by varying the electrical field of the device. The advantage of using a FET is that it can be used at higher currents than BJTs and has a much simpler construction.
Application Field
The BFR31,215 transistor has a wide range of applications in a variety of industries. In the medical field, it is used for controlling medical machines such as MRI scanners, CT scanners and ultrasound machines. In the automotive industry, they are used in engine control systems and transmission control systems. In the industrial sector, they are used in motor control systems, temperature regulation and power management. In the telecommunications field, they are used in telephone switching systems, cable transmitters and other communications equipment.
Working Principle
The working principle of the BFR31,215 transistor is based on the basic BJT structure. A BFR31,215 is constructed with two p-type and two n-type semiconductor junctions, with a metal gate electrode between them. When current is applied to the metal gate, an electric field is generated, which modulates the conductivity of the transistor. This means that by varying the gate voltage, the current passing through the BJT can be increased or decreased.
The metal gate electrode can also be used for isolation, allowing the transistor to switch multiple devices on and off rapidly. This makes the BFR31,215 ideal for use in high-speed switching circuits. Additionally, the BFR31,215 is capable of withstanding a high temperature and has a low power consumption, making it suitable for use in portable applications.
Conclusion
The BFR31,215 transistor is a versatile device which offers a wide range of applications in the medical, automotive, industrial, and telecommunications industries. Its ability to rapidly switch multiple devices on and off and its low power consumption makes it an ideal choice for many applications. By understanding its construction and working principle, designers can use this device to maximize efficiency and performance in their circuits.
The specific data is subject to PDF, and the above content is for reference
Part Number | Manufacturer | Price | Quantity | Description |
---|
BFR31,215 | NXP USA Inc | 0.15 $ | 3000 | JFET N-CH 10MA 250MW SOT2... |
BFR31,235 | NXP USA Inc | 0.14 $ | 1000 | JFET N-CH 10MA 250MW SOT2... |
BFR30,215 | NXP USA Inc | 0.0 $ | 1000 | JFET N-CH 10MA 250MW SOT2... |
BFR30,235 | NXP USA Inc | 0.0 $ | 1000 | JFET N-CH 10MA 250MW SOT2... |
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