BFR360FH6327XTSA1

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BFR360FH6327XTSA1, which belongs to the Transistors - Bipolar (BJT) - RF category, is a high gain NPN plastic-encapsulated silicon RF mode transistor. It is designed primarily for use in oscillators, preamplifiers, low-noise amplifiers and switching circuits in the frequency range up to 250 MHz. This transistor applies a voltage to the emitter-base junction, thereby providing a variety of mechanisms to further amplify the transistor.

The BFR360FH6327XTSA1 is consist of epitaxial NPN silicon planar transistor. This transistor type uses a voltage control to amplify an input signal to a specific level. It has low collector-emitter saturation voltage, which is typically between 0.1 and 0.2 volts, and medium transition frequency.

Application Field

The BFR360FH6327XTSA1 is mostly used in the wireless communication systems, particularly in the digital network’s infrastructure and Wi-Fi applications. Its features make it suitable for these applications:

• Used for RF applications where wide bandwidth is not necessarily required such as Gaussian frequency shift keying (GFSK) modulation and other digital switching applications.
• Used in audio frequency routing, impedance matching, DC supply and other circuit requirements.
• Used in power supplies, DC-DC converter regulation and satellite navigation systems.
• Used in high-isolation amplifiers and hybrid, logic gate, RF amplifier, RF power amplifiers, CFOs and electric amplifiers.

Working Principle

The BFR360FH6327XTSA1 works with a three-layer structure of the NPN type. The base stands for the control terminal in which, by applying the input signal, it controls the current flowing from the emitter to collector which acts like an output signal. Thus, it works as an amplifier, meaning that the small voltage variation present in the base terminal, creates a large current variation in the collector-emitter output.

When using this type of transistor, the base voltage and current are small. The emitter-base junction can be viewed as a very small capacitor, highly dependent on the emitter current and temperature. The current gain of the transistor is due to the characteristics of the emitter. The high current gain is because of the interaction between the electrons and the holes present in the base region.

Another thing to consider when choosing this transistor is the current amplification factor, also known as the β-factor. This is the ratio of the collector current to the emitter current, or the ratio of the collector current to the base current. This β-factor is important because it determines the amount of current that flows from the collector to the emitter, depending on the current flowing through the base.

Finally, it is worth mentioning that when selecting this product, it is essential to consider its thermal specifications. This is because the junction temperature has an impact on the β-factor, and thus on the current amplification of the transistor. In many cases, the junction temperature should be below the specified value to achieve optimum performance.

In conclusion, the BFR360FH6327XTSA1 is a bipolar transistor designed for RF applications which operates with a three-layer structure of the NPN type and can be used in audio frequency routing, impedance matching, DC supply and other circuit requirements. It works by amplifying the voltage signal applied to the base terminal, and its current amplification factor, also known as the β-factor, must be taken into account when selecting this product.

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