BFR360L3E6765XTMA1

Series:	--
Packaging:	Tape & Reel (TR)
Part Status:	Active
Transistor Type:	NPN
Voltage - Collector Emitter Breakdown (Max):	9V
Frequency - Transition:	14GHz
Noise Figure (dB Typ @ f):	1dB ~ 1.3dB @ 1.8GHz ~ 3GHz
Gain:	11.5dB ~ 16dB
Power - Max:	210mW
DC Current Gain (hFE) (Min) @ Ic, Vce:	90 @ 15mA, 3V
Current - Collector (Ic) (Max):	35mA
Operating Temperature:	150°C (TJ)
Mounting Type:	Surface Mount
Package / Case:	SC-101, SOT-883
Supplier Device Package:	PG-TSLP-3-1
Base Part Number:	BFR360

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BFR360L3E6765XTMA1 is a type of transistor, specifically a Bipolar Junction Transistor (BJT) of the Radio Frequency (RF) variety. It is widely used in all sorts of RF applications where a reliable and efficient signal is needed.BFR360L3E6765XTMA1 transistors operate in two modes, saturated and non-saturated. In the saturated mode, the transistor is in full conduction, allowing current to flow freely, while in the non-saturated mode, the transistor\'s conduction is partially limited, as current is not allowed to flow to the same extent. The levels of conduction are determined by the Applied Voltage and Base Current, meaning that the applied voltage needs to be adjusted in order to achieve the desired level of conduction. This can be useful in controlling the power output of the transistor. The structure of the BFR360L3E6765XTMA1 transistor consists of three terminals; the Emitter, Collector and Base. The Base-Emitter diode allows current flow only if a voltage of 0.7V or more is applied across it. The Base terminal is connected to the Base-Collector diode, which also requires 0.7V or more for current to flow. When a voltage is applied to the Base, it attracts a certain amount of electrons from the Emitter, which then travel through the Collector, thus allowing a current to flow from the Emitter to the Collector.In the Field of Radio Frequency applications, the BFR360L3E6765XTMA1 transistor is mainly used as a power amplifier and switch. The Enhanced Gain of the transistor makes it suitable for demanding applications such as wireless communications and high-power radio transmission. It also works well in RF circuitry that requires precision and speed.BFR360L3E6765XTMA1 transistors can also be used in digital circuits, such as those found in computers and DVD players. The speed of switching and the low noise are two important factors in this application.Due to its low Capacitance and high Threshold Voltage, the BFR360L3E6765XTMA1 transistor is also popular for use in power circuits. It\'s high gain and long life also makes it an ideal choice for use in motor control applications.Finally, the BFR360L3E6765XTMA1 transistor is also used in industrial applications, such as heated beds for 3d Printing and hot air brushes for printing on fabrics.In order to summarize, the BFR360L3E6765XTMA1 is a type of Bipolar Junction Transistor (BJT) used for a variety of Radio Frequency (RF) applications. The Enhanced Gain of the transistor makes it suitable for use in a wide range of applications, such as wireless communications, high-power radio transmissions, digital circuits, power circuits, and industrial applications.

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