Allicdata Part #: | 568-6203-2-ND |
Manufacturer Part#: |
BFR30,215 |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | NXP USA Inc |
Short Description: | JFET N-CH 10MA 250MW SOT23 |
More Detail: | JFET N-Channel 10mA 250mW Surface Mount SOT-23 (T... |
DataSheet: | BFR30,215 Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
Series: | -- |
Packaging: | Tape & Reel (TR) |
Part Status: | Obsolete |
FET Type: | N-Channel |
Drain to Source Voltage (Vdss): | 25V |
Current - Drain (Idss) @ Vds (Vgs=0): | 4mA @ 10V |
Current Drain (Id) - Max: | 10mA |
Voltage - Cutoff (VGS off) @ Id: | 5V @ 0.5nA |
Input Capacitance (Ciss) (Max) @ Vds: | 4pF @ 10V |
Power - Max: | 250mW |
Operating Temperature: | 150°C (TJ) |
Mounting Type: | Surface Mount |
Package / Case: | TO-236-3, SC-59, SOT-23-3 |
Supplier Device Package: | SOT-23 (TO-236AB) |
Base Part Number: | BFR30 |
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The BFR30,215 is a Junction Field Effect Transistor (JFET) that is commonly used in various applications. It is a voltage controlled device with two terminals; the gate and the source. The JFET is used to control the current-voltage relationship of a circuit, allowing for more efficient use of electrical energy and power. The BFR30,215 is considered a medium-power JFET, meaning it can handle larger currents than an L-series power transistor.
The BFR30,215 has three terminals; the Gate or Control terminal, the Source terminal and the Drain terminal. When an electric potential is applied between the Gate and Source terminals, the source-drain current is controlled by the Gate-Source voltage. This is known as the transconductance of a JFET. The transconductance of the BFR30,215 is typically 7 mA/V. This means that for each 1 V increase in Gate-Source voltage, the Source-Drain current increases by 7 mA.
The current-voltage relationship of the BFR30,215 is linear, meaning the change in both current and voltage with respect to each other is constant. It is also a symmetrical device, meaning that the current-voltage relationship of the Source-to-Drain and Gate-to-Source is the same. This makes it ideal for use in signal processing circuits, amplifiers and other linear analog applications.
The BFR30,215 is rated for a drain-source voltage of 30V and a drain current of 0.215A, meaning it is capable of handling larger currents than most L-tier power transistors. The maximum junction temperature is 175°C, meaning it can handle higher temperatures than the D-tier JFETs. The BFR30,215 also has a high input impedance, meaning it requires very little current to control the gate-source voltage. This makes it more resistant to noise and other forms of interference.
The BFR30,215 is commonly used in various applications such as amplifiers, preamplifiers, drive circuits and signal processing. In amplifiers and preamplifiers, the JFET serves as a voltage controlled current source, allowing for more precise and stable control of the signal. In drive circuits, the JFET is used to control the current-voltage relationship of the circuit, allowing for more efficient use of electrical energy and power. In signal processing circuits, the BFR30,215 is used to process signals in a linear fashion, allowing for easy filtering and amplification of the signal.
The BFR30,215 is a versatile and reliable JFET that is used in a wide range of applications. Its linear relationship, high input impedance and temperature ratings make it a good choice for use in analog circuits and signal processing. The BFR30,215 is an ideal choice for a wide range of applications that require precise, stable current control.
The specific data is subject to PDF, and the above content is for reference
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