Allicdata Part #: | BFR30LT1-ND |
Manufacturer Part#: |
BFR30LT1 |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | ON Semiconductor |
Short Description: | JFET N-CH 225MW SOT23 |
More Detail: | JFET N-Channel 225mW Surface Mount SOT-23-3 (TO-... |
DataSheet: | BFR30LT1 Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
Series: | -- |
Packaging: | Tape & Reel (TR) |
Part Status: | Obsolete |
FET Type: | N-Channel |
Drain to Source Voltage (Vdss): | 25V |
Current - Drain (Idss) @ Vds (Vgs=0): | 4mA @ 10V |
Voltage - Cutoff (VGS off) @ Id: | 5V @ 0.5nA |
Input Capacitance (Ciss) (Max) @ Vds: | 5pF @ 10V |
Power - Max: | 225mW |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Mounting Type: | Surface Mount |
Package / Case: | TO-236-3, SC-59, SOT-23-3 |
Supplier Device Package: | SOT-23-3 (TO-236) |
Base Part Number: | BFR30 |
Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us: sales@allicdata.com
The BFR30LT1 is a type of JFET transistor device. It belongs to the category of low-power transistors and has a gate channel width of 30μm.
A JFET transistor (short for junction field-effect transistor) is a semiconductor device consisting of a three-terminal element that has an voltage-controlled gate, consisting of a P-N junction. JFET transistor devices are divided into n-channel devices and p-channel devices, depending on the polarity of the current flow. The BFR30LT1 belongs to the category of n-channel devices.
The BFR30LT1 has a wide range of applications in a variety of fields, from consumer electronics and industrial applications to military and aerospace. In consumer electronics, it is often used in audio amplifiers, stereo systems, sound systems, and other consumer audio products. In industrial applications, it has been used in motor control systems, controllers for electric floor heating, and industrial process control.
The working principle of the BFR30LT1 works by utilizing the electric field around its gate. When the gate voltage is increased, the electric field across the junction between the drain and source electrodes increases and the opening of the channel increases, allowing the current to flow between them. When the gate voltage decreases, the electric field across the junction decreases and the opening of the channel decreases, restricting the current to flow in the opposite direction.
In addition, the BFR30LT1 is capable of operating with low gate voltages for improved reliability. It also offers high switching speed and high breakdown voltage. This makes it ideal for applications that require a large number of switching cycles in a short time interval.
The BFR30LT1 provides an excellent combination of performance, reliability and cost effectiveness. It is suitable for applications that require low power and low noise. Its wide range of applications and compact size makes the BFR30LT1 a popular choice for many electronic devices.
The specific data is subject to PDF, and the above content is for reference
Part Number | Manufacturer | Price | Quantity | Description |
---|
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