Allicdata Part #: | 568-7544-ND |
Manufacturer Part#: |
BLA6G1011-200R,112 |
Price: | $ 195.29 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Ampleon USA Inc. |
Short Description: | RF FET LDMOS 65V 20DB SOT502A |
More Detail: | RF Mosfet LDMOS 28V 100mA 1.03GHz ~ 1.09GHz 20dB 2... |
DataSheet: | BLA6G1011-200R,112 Datasheet/PDF |
Quantity: | 50 |
1 +: | $ 177.54000 |
10 +: | $ 170.04000 |
Series: | -- |
Packaging: | Bulk |
Part Status: | Active |
Transistor Type: | LDMOS |
Frequency: | 1.03GHz ~ 1.09GHz |
Gain: | 20dB |
Voltage - Test: | 28V |
Current Rating: | 49A |
Noise Figure: | -- |
Current - Test: | 100mA |
Power - Output: | 200W |
Voltage - Rated: | 65V |
Package / Case: | SOT-502A |
Supplier Device Package: | LDMOST |
Base Part Number: | BLA6G1011 |
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The BLA6G1011-200R,112 is a widely used transistor. This device is classified as a Transistor, FETs, MOSFETs and RF. As the name suggests, the BLA6G1011-200R,112 is specifically designed for usage in RF, or radio frequency applications. This type of transistor is widely employed in electronic circuits as amplifiers, oscillators, and frequency multipliers.
This device is composed of a conducting channel that allows for the control of an electric current. It is made up of a three layer semiconductor material and a gate which when energized via an applied electric field, controls the flow of the current through the channel. This transistor operates in a similar way to a field effect transistor, the difference is when acted upon by the gat voltage, the current flows between the source and the drain electrode.
The application field of the BLA6G1011-200R,112 is quite broad. It can be used for radio RF application, as well as for microwave amplifiers, digital signal processing, switching applications, oscillators, and even in amplifiers which are less power prone. This device is heavily used in industries such as telecommunications, medical, aerospace, and automotive.
The working principle of the BLA6G1011-200R,112 is relatively simple. A small amount of charge is placed on a metal gate electrode above the channel, by means of an applied electric field. This creates an inversion layer between the source and the drain which then provides the conductive path for the current to flow through. When the voltage of the gate is adjusted, the width of the lip and depletion zones can be changed which in turn increases or decreases the conductivity of the current flowing through. As the voltage of the gate is changed, the current flow changes which gives this transistor its controlling properties.
The BLA6G1011-200R,112 is a highly reliable and efficient device for RF and other applications. The controlling properties of its working principle make it a great choice for applications which require a precise and accurate control of a current or voltage. Its use in industries like telecommunications, medical, aerospace, and automotive have made it a highly sought-after device and its suitability for many applications have made it a great choice for those looking for reliable and efficient solutions.
The specific data is subject to PDF, and the above content is for reference
Part Number | Manufacturer | Price | Quantity | Description |
---|
BLA6G1011-200R,112 | Ampleon USA ... | 195.29 $ | 50 | RF FET LDMOS 65V 20DB SOT... |
BLA6G1011L-200RG,1 | Ampleon USA ... | 195.29 $ | 49 | RF FET LDMOS 65V 20DB SOT... |
BLA6G1011LS-200RG, | Ampleon USA ... | 195.29 $ | 20 | RF FET LDMOS 65V 20DB SOT... |
BLA6H1011-600,112 | Ampleon USA ... | 393.89 $ | 16 | RF FET LDMOS 100V 17DB SO... |
BLA6H0912L-1000U | Ampleon USA ... | 610.13 $ | 1000 | RF FET LDMOS 100V 15.5DB ... |
BLA6H0912-500,112 | Ampleon USA ... | 367.9 $ | 1000 | RF FET LDMOS 100V 17DB SO... |
BLA6H0912LS-1000U | Ampleon USA ... | 600.68 $ | 1000 | RF FET LDMOS 100V 15.5DB ... |
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