BLA6H0912LS-1000U

Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us:   sales@allicdata.com

The BLA6H0912LS-1000U is a type of High Voltage N-channel enhancement mode field effect transistor (FET). It is an electrically insulated gate type transistor, typically used in high voltage power supplies, and as a low-frequency amplifier and switching circuit. FETs are ideal for use in applications that require high performance, precision and accuracy. These transistors are also used in applications where a wide bandwidth is needed, or high gain and low noise characteristics.

The BLA6H0912LS-1000U has an N-channel, which means that the p-types and n-type materials are arranged in a way that produces a negative e-field when the gate voltage is applied. This voltage causes electrons to be repelled from the n-type and attracted to the p-type, thus creating a conducting path in the transistor. The N-channel FET also features a depletion region, which is a gap between the p-type and n-type materials in which the electrons can move freely.

The BLA6H0912LS-1000U is suitable for use in applications that require a wide frequency range, from the audio to the radio frequency range. It is also suitable for use in high voltage power supplies, as it can handle high operating voltages. It can also be used in switching circuits, as it provides low on-resistance and high current capacity.

The main feature of the BLA6H0912LS-1000U is its high speed switching characteristics, which make it ideal for use in high speed applications. It also has low input capacitance and low input leakage current, which make it suitable for use in low-power applications. Its high voltage rating makes it suitable for use in high voltage power supplies.

The BLA6H0912LS-1000U has been designed with robustness and reliability in mind. It features a low threshold voltage, which makes it suitable for use in high speed switching applications. Its low power dissipation also makes it suitable for use in low-power applications. It also features a high breakdown voltage, which makes it suitable for use in high power applications.

In summary, the BLA6H0912LS-1000U is a type of high voltage N-channel enhancement mode field effect transistor (FET). It is an electrically insulated gate type transistor, typically used in high voltage power supplies. It is suitable for use in applications that require a wide frequency range, and can handle high operating voltages. It also has low input capacitance and low input leakage current, which make it suitable for use in low-power applications. Its high voltage rating makes it suitable for use in high voltage power supplies. Its high speed switching characteristics, low power dissipation and high breakdown voltage make it suitable for use in high speed switching applications, as well as high power applications.

The specific data is subject to PDF, and the above content is for reference