BLA6H0912-500,112 Allicdata Electronics
Allicdata Part #:

568-7545-ND

Manufacturer Part#:

BLA6H0912-500,112

Price: $ 367.90
Product Category:

Discrete Semiconductor Products

Manufacturer: Ampleon USA Inc.
Short Description: RF FET LDMOS 100V 17DB SOT634A
More Detail: RF Mosfet LDMOS 50V 100mA 960MHz ~ 1.22GHz 17dB 45...
DataSheet: BLA6H0912-500,112 datasheetBLA6H0912-500,112 Datasheet/PDF
Quantity: 1000
60 +: $ 334.45400
Stock 1000Can Ship Immediately
$ 367.9
Specifications
Series: --
Packaging: Bulk 
Part Status: Active
Transistor Type: LDMOS
Frequency: 960MHz ~ 1.22GHz
Gain: 17dB
Voltage - Test: 50V
Current Rating: 54A
Noise Figure: --
Current - Test: 100mA
Power - Output: 450W
Voltage - Rated: 100V
Package / Case: SOT634A
Supplier Device Package: CDFM2
Description

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BLA6H0912-500,112 is a type of metal oxide semiconductor field effect transistor (MOSFET) belonging to the radio frequency (RF) category. It is made up of thick film technology and thus offers a high degree of reliability. This type of transistor is suitable for a wide range of applications owing to its easy and consistent switching performance, as well as its heat dissipation properties. Furthermore, it is capable of switching high frequency AC signals with a low phase shift.

MOSFET transistors are used as voltage-controlled switches with either single-body or double-gate operation. In single-gate operation, the transistor acts as an always-on switch that can be controlled electrically by applying voltages to the gate terminal. In double-gate operation, a combination of two transistors is used to allow the control of the device. This configuration is often preferred in RF applications due to its excellent performance at high frequencies.

The BLA6H0912-500,112 is a special type of MOSFET that is designed for high frequency operations. The transistor is composed of an insulated gate, a source, a drain, and a body. It utilizes an electric field in order to control the current flow between the source and drain. When the voltage applied to the gate terminal is increased, the electric field induces a current from the source to the drain, thus allowing the transistor to switch on and off. This transistor can handle up to 500mA of current and has a maximum voltage rating of 12V.

This MOSFET transistor is suitable for a wide range of RF applications, such as radio transmitters, amplifiers, and transceivers. It is also used in high frequency switching, where it can be used as a switch for oscillators, modulators, and mixers. As the BLA6H0912-500,112 is capable of switching high frequency AC signals with a low phase shift, it is also used in oscillator and generator circuits.

The BLA6H0912-500,112 is a versatile MOSFET transistor with a wide range of application and uses. Due to its low losses and consistent switching performance, it is capable of operating at high frequencies and thus is perfect for use in RF applications, such as radio transmitters, amplifiers, and transceivers. Moreover, its easy switching operation and heat dissipation properties make it an ideal choice for high frequency switching applications.

The specific data is subject to PDF, and the above content is for reference

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