BLF346,112 Allicdata Electronics
Allicdata Part #:

568-2397-ND

Manufacturer Part#:

BLF346,112

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: Ampleon USA Inc.
Short Description: RF FET NCHA 65V 16DB SOT119A
More Detail: RF Mosfet N-Channel 28V 3A 224.25MHz 16.5dB 30W CD...
DataSheet: BLF346,112 datasheetBLF346,112 Datasheet/PDF
Quantity: 1000
1 +: 0.00000
Stock 1000Can Ship Immediately
$ 0
Specifications
Series: --
Packaging: Tray 
Part Status: Obsolete
Transistor Type: N-Channel
Frequency: 224.25MHz
Gain: 16.5dB
Voltage - Test: 28V
Current Rating: 13A
Noise Figure: --
Current - Test: 3A
Power - Output: 30W
Voltage - Rated: 65V
Package / Case: SOT-119A
Supplier Device Package: CDFM6
Description

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The BLF346,112 is a MOSFET, which is a type of RF field-effect transistor (FET). It is a type of transistor that works on the principle of using an electric field to influence the flow of current more efficiently than a traditional FET. The BLF346,112 is a high-performance transistor, making it ideal for use in RF applications. It is also capable of working under extreme temperatures, something that is not possible with a traditional FET.

The BLF346,112 FET can be used for a variety of applications, ranging from radio-frequency (RF) applications to power supplies and even digital logic circuits. In the field of radio-frequency applications, the BLF346,112 is ideal for amplifying and switching signals that range from very low frequencies (VLF) up to microwave frequencies (GHz). Such applications include radar, Wi-Fi, and satellite communications. For power supply applications, the transistor can be used to provide a stable supply of current or voltage for various electronic systems.

The working principle behind the BLF346,112 FET involves making use of an electric gate voltage. When a voltage is applied to the gate of the FET, it affects the current flow through its channel. This voltage can be used to regulate the current that flows in the channel of the FET, allowing it to be used as an amplifier or switch. In addition, the electric field that is created between the gate and the channel also affects the capacitance of the FET, allowing it to filter out unwanted signals.

The BLF346,112 FET also has a very low power rating, which means that it can operate at lower voltages and frequencies than other types of FETs. It also has a very high power rating, making it ideal for use in power supplies. Furthermore, it can be used in digital logic circuits, since it can act as a switch from one logic state to another. This makes it very useful for communication systems and data transmission.

In conclusion, the BLF346,112 is a type of RF Field-effect Transistor. It is capable of working under extreme temperatures and can be used in a variety of applications, from radio-frequency amplifying and switching to power supplies and digital logic circuits. It works using an electric gate voltage, and its low power rating and high power rating make it ideal for many applications.

The specific data is subject to PDF, and the above content is for reference

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