BLF368,112

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BLF368,112 is a RF transistor used in a wide range of applications.
This type of transistor is a Field-Effect transistor, or FET, and instead of relying on a traditional current path through the device, relies on the electric field between the gate and the semiconductor material. FETs are made up of three terminals; the gate, the drain and the source. In this case, BLF368,112 is a Metal-Oxide-Semiconductor FET (MOSFET), meaning that it is constructed with a metal material as the gate electrode and an insulating (oxide) layer as the gate dielectric.
The type of transistor is also designated for use in radio-frequency (RF) applications. The range of frequencies which the BLF368,112 can be used for is from the ultra-high frequency (UHF) band up to the microwave band. This is due to its having higher input impedance, lower output capacitance, higher power handling capability and better frequency response compared to other types of FETs. The radio frequency applications for which this transistor can be used include amplifiers (for satellite, UHF and cell phones), oscillators, frequency multipliers, switching and broadband applications.
The working principle of BLF368,112 transistor is pretty simple. When the gate is left open, the current between the drain and the source is blocked, meaning the transistor is “off”. When current is applied to the gate, it changes the electrical field between the gate and the semiconductor material, and thus results in an “on” state—a current can now flow between the drain and the source. Increasing the current applied to the gate will increase the amount of current flowing between the drain and source, which is known as the “gain” of the transistor. Generally speaking, the higher the gain, the more power the transistor can handle.

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