BLF3G21-6,135

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BLF3G21-6,135 Application Field and Working Principle

The BLF3G21-6,135 is a Field-Effect Transistor or FET with an N-channel depletion-mode planar construction. It has a small size and high-frequency operation characteristics for applications in RF (radio frequency) communications. The device has a rating of 30 volts, a drain to source breakdown voltage of 40V, a peak current of 180mA, and a gate to source breakdown voltage of 45V.

Applications for the BLF3G21-6,135 include low power VHF (very high frequency), UHF (ultra high frequency), L-band, and microwave RF communications. The device is ideal for amplifier, switch, attenuator and mixer circuits, and is a suitable replacement for junction FETs, which are no longer used. The device is designed for use with 50 ohm, 75 ohm, and 500 ohm impedance circuits with a wide range of applications.

The working principle of the BLF3G21-6,135 is based on the device’s P-channel construction. In this arrangement, a gate voltage applied to the gate of the device creates an electric field across the drain-source region. This electric field affects the flow of electrons between source and drain and produces the desired current between the source and drain.

The BLF3G21-6,135 has an on-resistance rating of 6,135 ohms at room temperature, a low threshold voltage of 0.8V, a gate capacitance of 0.35 pF, a drain capacitance of 0.6 pF, an on-voltage of 0.10V, and an off-voltage of 0.90V. It has low power consumption and is capable of providing a linear output regardless of operating frequency.

The BLF3G21-6,135 is typically used in Amplitude Modulation (AM) and Frequency Modulation (FM) communication systems, as well as in Radar systems. It is also capable of providing low noise and distortion free signals, making it ideal for applications requiring precise signal propagation. It is ideal for use in low power designs, allowing for more efficient circuitry designs.

The BLF3G21-6,135 is an excellent RF component for numerous applications. It is a reliable device due to its N-channel construction, small size, and high-frequency operation characteristics. Additionally, it is ideal for a wide range of applications, from low power VHF to UHF, L-band, and microwave communications. The low noise and distortion free signal achieved with the device make it a great choice for use in precision signal propagation.

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