Allicdata Part #: | BLL6G1214LS-250,11-ND |
Manufacturer Part#: |
BLL6G1214LS-250,11 |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Ampleon USA Inc. |
Short Description: | RF FET LDMOS 89V 15DB SOT502B |
More Detail: | RF Mosfet LDMOS 36V 150mA 1.2GHz ~ 1.4GHz 15dB 250... |
DataSheet: | BLL6G1214LS-250,11 Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
Series: | -- |
Packaging: | Tray |
Part Status: | Obsolete |
Transistor Type: | LDMOS |
Frequency: | 1.2GHz ~ 1.4GHz |
Gain: | 15dB |
Voltage - Test: | 36V |
Current Rating: | -- |
Noise Figure: | -- |
Current - Test: | 150mA |
Power - Output: | 250W |
Voltage - Rated: | 89V |
Package / Case: | SOT-502B |
Supplier Device Package: | SOT502B |
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The BLL6G1214LS-250 is a type of Field Effect Transistor (FET) and is part of a range of FETs that are used in RF (radio frequency) applications. It is designed to provide superior performance in a range of radio frequency applications from 0.1 to 12 GHz. This type of FET is suitable for use in a variety of broadband applications, including amplifiers, mixers, and switches, for a wide range of industrial, consumer, medical and space applications.
This type of FET is commonly used in applications requiring high gain and linearity. It has an input impedance of 50-100 ohms, which makes it suitable for use in devices with high impedance inputs such as receivers. Its high current gain of up to 200 is ideal for applications where efficient amplification is needed. It also has a low on-resistance (RDS) of around 10 ohms, which makes it useful for applications that require low power consumption.
The BLL6G1214LS-250 is often used as an RF switch, due to its low control voltage and power consumption. As a switch, it is used to control the transmission of signals between two circuits by varying the input voltage.When the input voltage is increased, the device is switched on and the output voltage is increased. On the other hand, when the input voltage is decreased, the device is switched off, and the output voltage is decreased. As a switch, it can be used for applications in radio transmitters, receivers and in other RF applications.
The working principle of the BLL6G1214LS-250 is based on the concept of a junction field effect transistor (JFET). A JFET is a type of transistor that uses an electric field, rather than a base current, to control the flow of current. In the BLL6G1214LS-250, the electric field is generated by a voltage applied to the gate, which is connected to the source terminal of the JFET. The voltage applied to the gate creates an electric field, which modifies the characteristics of the channel, allowing current to flow in certain conditions. As the voltage applied to the gate is increased, the current flowing through the channel also increases, and vice versa.
The BLL6G1214LS-250 is an ideal solution for radio frequency applications requiring high linearity, low power consumption, and low noise operation. Its high current gain and low control voltage make it suitable for use in a range of applications, and it is capable of providing superior performance in frequencies up to 12 GHz. This type of FET is suitable for use in a variety of industries, including medical, consumer, and space, due to its reliability and long life.
The specific data is subject to PDF, and the above content is for reference
Part Number | Manufacturer | Price | Quantity | Description |
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BLL6G1214L-250,112 | Ampleon USA ... | 0.0 $ | 1000 | RF FET LDMOS 89V 15DB SOT... |
BLL6G1214LS-250,11 | Ampleon USA ... | 0.0 $ | 1000 | RF FET LDMOS 89V 15DB SOT... |
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BLL6H1214LS-250,11 | Ampleon USA ... | 241.79 $ | 1000 | RF FET LDMOS 100V 17DB SO... |
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