BLL6H0514LS-130,11

Series:	--
Packaging:	Tube
Part Status:	Active
Transistor Type:	LDMOS
Frequency:	1.2GHz ~ 1.4GHz
Gain:	17dB
Voltage - Test:	50V
Current Rating:	18A
Noise Figure:	--
Current - Test:	50mA
Power - Output:	130W
Voltage - Rated:	100V
Package / Case:	SOT-1135B
Supplier Device Package:	CDFM2
Base Part Number:	BLL6H0514

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Introduction

The BLL6H0514LS-130,11 is a transistor specifically designed for radio frequency (RF) applications. It is a Field Effect Transistor (FET) specifically designed for use in high-frequency amplifying and switching applications. This article will discuss the application field of the BLL6H0514LS-130,11 as well as its working principle, so that a better understanding of the transistor can be had.

Application Field

The BLL6H0514LS-130,11 is designed primarily for use in RF applications. It has high-frequency voltage gain, which makes it well-suited for amplifying and switching applications. It can be used in high-quality low-noise RF amplifiers, RF modulators, transmitters, receivers, and other RF circuitry.The BLL6H0514LS-130,11 is specifically designed to operate at low-voltage levels, which makes it ideal for use in portable or battery powered radio devices. It can be used in a variety of systems and applications, including GSM, EDGE, and 3G and 4G cellular communications, WLAN, GPS navigation, audio earphones, RF remote controls, and WiMAX systems.

Working Principle

The BLL6H0514LS-130,11 operates on the well-known principle of a Field Effect Transistor. This principle is based on the idea of controlling the conductivity of a channel between two terminals by using an electric field. In this case, the two terminals are the source and the drain, and the electric field is controlled by a third terminal, known as the gate.When a voltage is applied to the gate, it creates an electric field which is sufficient to deplete the charge carriers in the channel between the source and the drain. This reduces the conductivity of the channel, which in turn reduces the current flowing between the source and the drain. This is known as a "pinch-off" effect and is the basic principle upon which the BLL6H0514LS-130,11 operates.The pinch-off effect is also known as the MOSFET (Metal Oxide Semiconductor Field Effect Transistor) principle and is the basis for many RF amplifiers and switching systems. The BLL6H0514LS-130,11 is specifically designed for RF applications, and its gate capacitance is matched to the transistor\'s transconductance to reduce distortion and improve linearity.

Conclusion

The BLL6H0514LS-130,11 is a transistor designed specifically for use in RF applications. It is a Field Effect Transistor which has high-frequency voltage gain and is ideal for amplifying and switching applications. It operates on the MOSFET principle of the pinch-off effect and is specifically matched for RF applications to reduce distortion and improve linearity. It is suitable for use in a wide range of applications, from GSM and WLAN to GPS navigation systems.

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