BLL6H0514-25,112 Allicdata Electronics
Allicdata Part #:

568-7556-ND

Manufacturer Part#:

BLL6H0514-25,112

Price: $ 103.33
Product Category:

Discrete Semiconductor Products

Manufacturer: Ampleon USA Inc.
Short Description: RF FET LDMOS 100V 21DB SOT467C
More Detail: RF Mosfet LDMOS 50V 50mA 1.2GHz ~ 1.4GHz 21dB 25W ...
DataSheet: BLL6H0514-25,112 datasheetBLL6H0514-25,112 Datasheet/PDF
Quantity: 144
1 +: $ 93.93300
10 +: $ 89.96400
Stock 144Can Ship Immediately
$ 103.33
Specifications
Series: --
Packaging: Tray 
Part Status: Active
Transistor Type: LDMOS
Frequency: 1.2GHz ~ 1.4GHz
Gain: 21dB
Voltage - Test: 50V
Current Rating: 2.5A
Noise Figure: --
Current - Test: 50mA
Power - Output: 25W
Voltage - Rated: 100V
Package / Case: SOT467C
Supplier Device Package: SOT467C
Base Part Number: BLL6H0514
Description

Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us:   sales@allicdata.com

Transistors - FETs, MOSFETs - RF

BLL6H0514-25,112 RF devices are a type of power MOSFET transistor typically used in high-frequency circuit designs. The devices are manufactured using the silicon-on-insulator (SOI) process and feature 25V breakdown voltage and on-state resistance of 5mΩ. This makes them effective components in applications where medium power, low-frequency noise characteristics, and high breakdown voltage are required.

In order to be suitable for use in RF devices, the transistors must maintain a high frequency of oscillation, meaning that the switching times must be held to very low levels. This is accomplished through a special design that uses thin oxide layers, electrostatic carriers, and other features. The combination of these technologies makes it possible for the transistors to be driven quickly over a wide range of frequencies, allowing them to display excellent frequency settling and linearity characteristics.

BLL6H0514-25,112 transistors feature low input capacitance, low on-state resistance, and low current leakage. This allows the devices to have high dynamics in the output stage of power amplifiers, which results in improved signal fidelity, wide frequency bandwidth and linearity. This makes them suitable for use in RF communication applications, including cellular phones, Wi-Fi, GPS, and other systems that require accuracy when transmitting and receiving information.

The devices are also used in high frequency power supplies, full bridges, and voltage step-up circuits. They feature low-charge injection and low gate threshold, allowing them to be used in circuits that are extremely sensitive to switching noise and signal fidelity. This makes them suitable for use in DC/DC converters, voltage converters and regulators, generator systems, and other applications where low noise levels and high accuracy are necessary.

The BLL6H0514-25,112 transistors incorporate an advanced level-shift technology that renders the devices immune to input-to-output shorts. This makes them ideal for use in high-voltage power supplies, as they can tolerate sustained shorts without suffering any damage.

In addition, the devices feature a low-capacitive design, low input capacitance and low on-state resistance. This combination of low capacitance and low resistance makes the devices ideal for use in power amplifiers and other high-frequency applications. Furthermore, the devices feature a low-power threshold, enabling them to be used in power supplies that require low input current.

Overall, BLL6H0514-25,112 transistors are advanced power MOSFET transistors that offer exceptional frequency dynamic range, low capacitance, and low on-state resistance. The devices are suitable for use in a wide variety of applications, including power supplies, voltage converters, DC/DC converters, voltage regulators, and RF communication systems. The devices’ advanced level-shift technology make them tolerant of input-to-output shorts, while their low-power threshold make them ideal for use in power supplies that require low input current. As a result, BLL6H0514-25,112 transistors are excellent components for high-frequency circuit designs.

The specific data is subject to PDF, and the above content is for reference

Related Products
Search Part number : "BLL6" Included word is 10
Part Number Manufacturer Price Quantity Description
BLL6G1214L-250,112 Ampleon USA ... 0.0 $ 1000 RF FET LDMOS 89V 15DB SOT...
BLL6G1214LS-250,11 Ampleon USA ... 0.0 $ 1000 RF FET LDMOS 89V 15DB SOT...
BLL6H0514-25,112 Ampleon USA ... 103.33 $ 144 RF FET LDMOS 100V 21DB SO...
BLL6H0514L-130,112 Ampleon USA ... 142.84 $ 57 RF FET LDMOS 100V 17DB SO...
BLL6H0514LS-130,11 Ampleon USA ... 142.84 $ 10 RF FET LDMOS 100V 17DB SO...
BLL6H1214-500,112 Ampleon USA ... 393.89 $ 16 RF FET LDMOS 100V 17DB SO...
BLL6H1214LS-250,11 Ampleon USA ... 241.79 $ 1000 RF FET LDMOS 100V 17DB SO...
BLL6H1214L-250,112 Ampleon USA ... 231.58 $ 1000 RF FET LDMOS 100V 17DB SO...
BLL6H1214LS-500,11 Ampleon USA ... 382.04 $ 1000 RF FET LDMOS 100V 17DB SO...
BLL6H1214P2S-250Z Ampleon USA ... 675.85 $ 1000 RF FET LDMOS 50V 27DB MOD...
Latest Products
MRF6S21050LR3

FET RF 68V 2.16GHZ NI-400RF Mosfet LDMOS...

MRF6S21050LR3 Allicdata Electronics
MRF6S18060NR1

FET RF 68V 1.99GHZ TO270-4RF Mosfet LDMO...

MRF6S18060NR1 Allicdata Electronics
MRF1550NT1

FET RF 40V 175MHZ TO272-6 WRAPRF Mosfet ...

MRF1550NT1 Allicdata Electronics
MRF8S21100HSR3

FET RF 65V 2.17GHZ NI780SRF Mosfet LDMOS...

MRF8S21100HSR3 Allicdata Electronics
LET16060C

FET RF 80V 1.6GHZ M243RF Mosfet LDMOS 28...

LET16060C Allicdata Electronics
LET16045C

FET RF 80V 1.6GHZ M243RF Mosfet LDMOS 28...

LET16045C Allicdata Electronics