Allicdata Part #: | 568-7556-ND |
Manufacturer Part#: |
BLL6H0514-25,112 |
Price: | $ 103.33 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Ampleon USA Inc. |
Short Description: | RF FET LDMOS 100V 21DB SOT467C |
More Detail: | RF Mosfet LDMOS 50V 50mA 1.2GHz ~ 1.4GHz 21dB 25W ... |
DataSheet: | BLL6H0514-25,112 Datasheet/PDF |
Quantity: | 144 |
1 +: | $ 93.93300 |
10 +: | $ 89.96400 |
Series: | -- |
Packaging: | Tray |
Part Status: | Active |
Transistor Type: | LDMOS |
Frequency: | 1.2GHz ~ 1.4GHz |
Gain: | 21dB |
Voltage - Test: | 50V |
Current Rating: | 2.5A |
Noise Figure: | -- |
Current - Test: | 50mA |
Power - Output: | 25W |
Voltage - Rated: | 100V |
Package / Case: | SOT467C |
Supplier Device Package: | SOT467C |
Base Part Number: | BLL6H0514 |
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Transistors - FETs, MOSFETs - RF
BLL6H0514-25,112 RF devices are a type of power MOSFET transistor typically used in high-frequency circuit designs. The devices are manufactured using the silicon-on-insulator (SOI) process and feature 25V breakdown voltage and on-state resistance of 5mΩ. This makes them effective components in applications where medium power, low-frequency noise characteristics, and high breakdown voltage are required.
In order to be suitable for use in RF devices, the transistors must maintain a high frequency of oscillation, meaning that the switching times must be held to very low levels. This is accomplished through a special design that uses thin oxide layers, electrostatic carriers, and other features. The combination of these technologies makes it possible for the transistors to be driven quickly over a wide range of frequencies, allowing them to display excellent frequency settling and linearity characteristics.
BLL6H0514-25,112 transistors feature low input capacitance, low on-state resistance, and low current leakage. This allows the devices to have high dynamics in the output stage of power amplifiers, which results in improved signal fidelity, wide frequency bandwidth and linearity. This makes them suitable for use in RF communication applications, including cellular phones, Wi-Fi, GPS, and other systems that require accuracy when transmitting and receiving information.
The devices are also used in high frequency power supplies, full bridges, and voltage step-up circuits. They feature low-charge injection and low gate threshold, allowing them to be used in circuits that are extremely sensitive to switching noise and signal fidelity. This makes them suitable for use in DC/DC converters, voltage converters and regulators, generator systems, and other applications where low noise levels and high accuracy are necessary.
The BLL6H0514-25,112 transistors incorporate an advanced level-shift technology that renders the devices immune to input-to-output shorts. This makes them ideal for use in high-voltage power supplies, as they can tolerate sustained shorts without suffering any damage.
In addition, the devices feature a low-capacitive design, low input capacitance and low on-state resistance. This combination of low capacitance and low resistance makes the devices ideal for use in power amplifiers and other high-frequency applications. Furthermore, the devices feature a low-power threshold, enabling them to be used in power supplies that require low input current.
Overall, BLL6H0514-25,112 transistors are advanced power MOSFET transistors that offer exceptional frequency dynamic range, low capacitance, and low on-state resistance. The devices are suitable for use in a wide variety of applications, including power supplies, voltage converters, DC/DC converters, voltage regulators, and RF communication systems. The devices’ advanced level-shift technology make them tolerant of input-to-output shorts, while their low-power threshold make them ideal for use in power supplies that require low input current. As a result, BLL6H0514-25,112 transistors are excellent components for high-frequency circuit designs.
The specific data is subject to PDF, and the above content is for reference
Part Number | Manufacturer | Price | Quantity | Description |
---|
BLL6G1214L-250,112 | Ampleon USA ... | 0.0 $ | 1000 | RF FET LDMOS 89V 15DB SOT... |
BLL6G1214LS-250,11 | Ampleon USA ... | 0.0 $ | 1000 | RF FET LDMOS 89V 15DB SOT... |
BLL6H0514-25,112 | Ampleon USA ... | 103.33 $ | 144 | RF FET LDMOS 100V 21DB SO... |
BLL6H0514L-130,112 | Ampleon USA ... | 142.84 $ | 57 | RF FET LDMOS 100V 17DB SO... |
BLL6H0514LS-130,11 | Ampleon USA ... | 142.84 $ | 10 | RF FET LDMOS 100V 17DB SO... |
BLL6H1214-500,112 | Ampleon USA ... | 393.89 $ | 16 | RF FET LDMOS 100V 17DB SO... |
BLL6H1214LS-250,11 | Ampleon USA ... | 241.79 $ | 1000 | RF FET LDMOS 100V 17DB SO... |
BLL6H1214L-250,112 | Ampleon USA ... | 231.58 $ | 1000 | RF FET LDMOS 100V 17DB SO... |
BLL6H1214LS-500,11 | Ampleon USA ... | 382.04 $ | 1000 | RF FET LDMOS 100V 17DB SO... |
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