BLL8H0514L-130U

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The BLL8H0514L-130U is a small signal RF N-channel Enhancement Metal Oxide Semiconductor Field Effect Transistor (MOSFET). It is available in an ultra-small LLP package, as well as an SOIC-8 package. The device has an integrated Passive Non-Reflective (PNR) configuration which is used for telecom, power amplifier applications in the dc to 8 GHz frequency range. The BLL8H0514L-130U is a high-performance device, providing low insertion loss, high gain linearity and low harmonic distortion. As such, it is suited for both linear and non-linear applications.

The BLL8H0514L-130U has an operating temperature range of -55 to +175C, with a maximum operating temperature of +125C. The maximum drain current is 6A, and the maximum drain-source voltage is 25V. The maximum output power is 65 mW at 100 MHz. The power supply voltage is typically 5V.

The BLL8H0514L-130U has a variety of applications in RF power amplifiers, low noise amplifiers, mixers and oscillators. It is also suitable for use in telecom applications, such as data networking and base station systems, as well as in automotive and consumer applications.

The BLL8H0514L-130U has four different operating modes: enhancement, enhancement with Gated Diode, depletion and depletion with Gated Diode. These modes allow the user to change the operating characteristics of the device according to the application.

The working principle of the BLL8H0514L-130U relies on the MOSFET’s characteristic that allows large current to flow through it when a voltage is applied to its gate. This voltage is also known as a Gate Voltage or Vgs. When the Vgs is in the linear region, the gate voltage allows for large conduction between the source and drain. This is known as the Enhancement mode where current flows in a conductive state.

In the depletion mode, the MOSFET’s gate voltage is reversed bias and current is allowed to flow from the source to the drain. This mode is used in non-linear applications because it causes less distortion than the enhancement mode. The depletion mode can also be used in linear applications to reduce distortion. Finally, the gated-diode mode can be used in applications where low power is required.

In summary, the BLL8H0514L-130U is an excellent choice for applications that require low distortion and low noise. Its flexibility in the four different operating modes allows the user to get the most out of the device in any given application. The small-sized package and its wide temperature range make the BLL8H0514L-130U an ideal choice for many RF power amplifier, low noise amplifier and mixer applications.

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