BLL8H1214LS-250U

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BLL8H1214LS-250U transistors are part of the BLL8H1214LS series transistors specifically created for RF applications. This RF transistor is specifically used for applications such as CATV amplifiers and other High Gain, High Frequency applications. The BLL8H1214LS-250U is known for its consistent product performance, outstanding reliability, and form-factor size.

The BLL8H1214LS-250U is a Field-Effect Transistor (FET), which is an electronic device consisting of a semiconductor material with three or more terminals for current conduction. A FET transistor is a voltage-controlled device, meaning the current flow can be controlled through a voltage applied to its gate terminal. The BLL8H1214LS-250U is a Metal-Oxide Semiconductor FET (MOSFET), which is the most common type of FET transistor. The MOSFET uses the resistance between the source and drain terminals to control the output current.

The FET transistors in the BLL8H1214LS-250U series have a breakdown voltage rating of 250 V. This means that the transistor is capable of operating at a maximum voltage of 250 V. This feature makes the BLL8H1214LS-250U suitable for use in high-voltage applications, such as CATV amplifiers. The BLL8H1214LS-250U series also features a high-frequency operating range of up to 4.0 GHz. This makes the BLL8H1214LS-250U a great choice for applications that require reliable high-frequency performance, such as CATV amplifiers.

The BLL8H1214LS-250U series transistors are specifically designed for radio frequency (RF) applications. The device features a high-power rate capability and low diversity loss. This makes the BLL8H1214LS-250U suitable for high-gain applications such as CATV amplifiers. The RF performance of the device is further enhanced through the use of a special field-plated metal gate structure. The metal gate structure provides superior resistance to breakdown due to high-frequency noises and also reduces gate-to-drain capacitance. This results in improved frequency response, increased gain, and reduced harmonic distortion.

The BLL8H1214LS-250U is designed with a number of features in order to ensure reliable RF performance. The device features wide bias and feedback adjustment margins, allowing it to work in a wide range of conditions. The low-noise design gives the device an incredibly low noise figure, making it suitable for sensitive applications. The device’s high-power handling capability allows it to support a wide range of RF output power levels. The device is also designed with thermal protection, which helps protect it from thermal runaway.

The BLL8H1214LS-250U series of transistors are specifically designed for CATV amplifiers and other High Gain, High Frequency applications. This Series of transistors features a breakdown voltage rating of 250 V, a high-frequency operating range of up to 4.0 GHz, a high-power rate capability, low diversity loss, and a special field-plated metal gate structure. All these features combine to make the BLL8H1214LS-250U an excellent choice for RF applications.

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