BLL8H0514LS-130U

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BLL8H0514LS-130U is a small signal enhancement-mode laterally diffused MOSFET which includes high stability and high RF performance. It belongs to the class of Field Effect Transistors (FETs) and is of the Radio Frequency (RF) type. The device features a temperature stability equivalent to a silicon-carbon stabilization resistor, an f _T of 134 GHz, and an f _MAX of 340 GHz. It is also equipped with high breakdown voltage, and low thermal resistance with a chip thickness of 0.5Ω. The compact 401 μm x 401 μm package is designed for easy soldering and usability with existing PCBs.

BLL8H0514LS-130U can mainly be used in the field of radio communication and other related high-frequency circuits for cell phones and other mobile devices. The device especially excels in harmonic mixing and frequency down-conversion with its high output power capability and high input & output return loss characteristics. It can be used in power amplifier circuits and frequency multiplication which can be found in varieties of communication equipment, such as GPS, radar, etc.. Additionally, it can be used as a Pre-Driver in high frequency power amplifiers and a PA driver in low noise wideband amplifiers.

BLL8H0514LS-130U operates using a depletion-mode principle. This means that when a negative voltage is applied to the gate, the current flows through the drains, whereas when a positive voltage is applied the current stops flowing. The main advantage of this type of device is that it can be used as switching device with low gate current and very fast switching times which is essential for high frequency operations. MOSFETs are used when a high breakdown voltage is required even with a relatively low gate-to-source voltage. In this type of device, the gate-to-source voltage is kept very low and the gate-to- drain voltage is kept very high. This results in the device collecting more charge during the switching time reducing the switching time.

BLL8H0514LS-130U comes in a compact package and is an ideal solution for radio communication needs in wireless applications. Its usage range is from the HF up to W band which is suitable in a wide range of applications. It is built to work reliably even in extreme conditions like high-temperature or high vibration environments. This makes the device a strong contender to be used in high-end communications procedures.

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