BLP8G10S-270PWY Discrete Semiconductor Products |
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| Allicdata Part #: | 568-12812-2-ND |
| Manufacturer Part#: |
BLP8G10S-270PWY |
| Price: | $ 36.05 |
| Product Category: | Discrete Semiconductor Products |
| Manufacturer: | Ampleon USA Inc. |
| Short Description: | RF FET LDMOS 65V 20DB SOT12212 |
| More Detail: | RF Mosfet LDMOS (Dual), Common Source 28V 2A 718.5... |
| DataSheet: | BLP8G10S-270PWY Datasheet/PDF |
| Quantity: | 200 |
| 100 +: | $ 32.77040 |
| Series: | -- |
| Packaging: | Tape & Reel (TR) |
| Part Status: | Active |
| Transistor Type: | LDMOS (Dual), Common Source |
| Frequency: | 718.5MHz ~ 765.5MHz |
| Gain: | 20dB |
| Voltage - Test: | 28V |
| Current Rating: | -- |
| Noise Figure: | -- |
| Current - Test: | 2A |
| Power - Output: | 56W |
| Voltage - Rated: | 65V |
| Package / Case: | SOT-1221-2 |
| Supplier Device Package: | 6-HSOPF |
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The BLP8G10S-270PWY is a type of MOSFET transistor. In radio-frequency (RF) devices, MOSFETs are used as amplifiers due to their low electrical noise and high input impedance. Specifically, the BLP8G10S-270PWY is a discrete wideband, enhancement mode MOSFET designed for use in amplifiers, oscillators, and other linear applications.
A MOSFET is a type of field-effect transistor (FET) which is composed of an insulated gate that is capable of controlling the conductivity of a semiconductor material. The gate is insulated by a thin layer of oxide, meaning that it is not directly attached to the source or drain which reduces gate capacitance. This insulation results in high input impedance, meaning MOSFETs are well-suited for use in high-frequency circuits.
In RF applications, the BLP8G10S-270PWY is a high-frequency, high-power, enhancement-mode MOSFET. It features a wide frequency range from 896 to 890 MHz and high input impedance, providing a high-level signal-to-noise ratio. This makes it ideal for use in a variety of linear high-frequency applications, such as amplifiers, oscillators, and RF signal conditioning devices.
The BLP8G10S-270PWY can be used in both discrete and integrated circuit applications. In circuit applications, it acts as a three-terminal device, providing a low-noise output signal. It is designed with a high-power-handling capability, making it suitable for use in power amplifiers. This transistor can also be used in various types of mixers, providing signal exchange between two signals at different frequencies.
The BLP8G10S-270PWY is a versatile, high-power transistor with a wide frequency range and great signal-to-noise ratio. Its insulated gate and low electrical noise make it perfect for use in high-frequency, amplifying applications. It is also suitable for use in a variety of mixed-signal scenarios, providing efficient signal exchange between two signals at different frequencies. By using the BLP8G10S-270PWY, engineers can design high-quality, high-performance, and reliable circuits with greater efficiency.
The specific data is subject to PDF, and the above content is for reference
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BLP8G10S-270PWY Datasheet/PDF