BLP8G27-5Z Discrete Semiconductor Products

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BLP8G27-5Z is an enhancement-mode N-channel MOSFET (metal oxide semiconductor field-effect transistor), specially made for radio frequency (RF) applications. It is widely used in many RF circuits such as audio amplifiers and power amplifiers/detectors, transmitters and receivers, as well as switching regulators.

It consists of a handful of passive components (capacitors, inductors, resistors and diodes) integrated together on a semiconductor chip. It functions by allowing current to flow from one terminal to another when the voltage at one terminal exceeds the voltage at the other. Additionally, the MOSFET has a “gate” or “source” which has a varying threshold voltage required for the current gain, thereby allowing it to be managed for varying current output.

More specifically, the BLP8G27-5Z comprises of an N-type channel MOSFET with its drain and source pins connected directly to the gate. The gate has a Schottky diode connected in between, which is used to reduce the voltage stress on the device. This device has the capacity to transmit radio frequency power of up to 5 Watts and has a frequency range of 0-50 MHz. It also has a low input capacitance and low gate resistance, making it suitable for high frequency RF operation.

The MOSFET offers relatively high gain and can be quickly switched on and off for power control in a very short period of time. It operates on a low gate-drain voltage and the very low gate-drain capacitance enables it to minimize current leakage, especially at high frequencies. Moreover, its low noise characteristic makes it an excellent choice for RF applications.

The BLP8G27-5Z is a very versatile device used in radio frequency applications. It has excellent characteristics as it is able to handle high frequency power and very small leakage current. It is fast-switching and offers high gain, making it ideal for a variety of application such as power control in audio amplifiers, transmitters, receivers and power amplifiers/detectors.

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