BQ4011YMA-150N Allicdata Electronics
Allicdata Part #:

BQ4011YMA-150N-ND

Manufacturer Part#:

BQ4011YMA-150N

Price: $ 0.00
Product Category:

Integrated Circuits (ICs)

Manufacturer: Texas Instruments
Short Description: IC NVSRAM 256K PARALLEL 28DIP
More Detail: NVSRAM (Non-Volatile SRAM) Memory IC 256Kb (32K x ...
DataSheet: BQ4011YMA-150N datasheetBQ4011YMA-150N Datasheet/PDF
Quantity: 1000
1 +: 0.00000
Stock 1000Can Ship Immediately
$ 0
Specifications
Series: --
Packaging: Tray 
Part Status: Obsolete
Memory Type: Non-Volatile
Memory Format: NVSRAM
Technology: NVSRAM (Non-Volatile SRAM)
Memory Size: 256Kb (32K x 8)
Write Cycle Time - Word, Page: 150ns
Access Time: 150ns
Memory Interface: Parallel
Voltage - Supply: 4.5 V ~ 5.5 V
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Through Hole
Package / Case: 28-DIP Module (0.61", 15.49mm)
Supplier Device Package: 28-DIP Module (18.42x37.72)
Base Part Number: BQ4011
Description

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Memory is a fundamental component in a computer system. In general, it serves as a storage area for programs and data. Memory is usually composed of integrated circuits such as transistors, capacitors, resistors, etc. One such memory component is the BQ4011YMA-150N.

The BQ4011YMA-150N is a static random access memory (SRAM) integrated circuit used in many applications. It offers high-speed storage and data transfer. It features a 4-bit wide data bus and requires a 5-signalling voltage supply. It is also available in a variety of configurations, including 256K x 16-bit, 16K x 32-bit, 32K x 16-bit, and 32K x 32-bit.

The BQ4011YMA-150N is a common choice for applications such as automotive, medical imaging, communications, industrial, and embedded control. Its thermal and current characteristics make it highly efficient, reliable, and low-power. It is also commonly used in DSP-aided imaging applications because it integrates a set of control and signal path registers for improved performance.

The BQ4011YMA-150N features a dynamic write-per-read (WPR) architecture. This means that its read and write cycles are independent, and the memory can be written or read multiple times without having to store the data in a static buffer. It also utilizes an advanced time-speed-overlap (TSO) circuitry which allows it to complete read and write cycles quickly and reliably.

The BQ4011YMA-150N is designed for high-speed and low-power operation. It incorporates power-efficient local SRAM core, programmable read and write cycle controls, and an integrated write-back buffer to minimize energy consumption. Its architecture also allows for simultaneous multiple accesses, which can save energy when multiple devices are accessing the same memory at the same time.

To improve its performance, the BQ4011YMA-150N uses dual-detect banks which can detect asynchronous page or accesses and provide better performance. It also includes error correction code (ECC) which helps detect and correct errored data. Furthermore, it features a low-noise power supply (LNPS) circuitry which reduces on-board noise and interference and helps to improve overall system performance.

Overall, the BQ4011YMA-150N is an effective and reliable memory component. Its features make it great for a variety of applications, including automotive, medical imaging, communications, industrial, and embedded control. It is designed for high-speed and low-power operation and provides enhanced performance with powerful local SRAM core, ECC, and LNPS circuitry. The BQ4011YMA-150N is an ideal choice for modern memory needs.

The specific data is subject to PDF, and the above content is for reference

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