BQ4011YMA-200 Allicdata Electronics
Allicdata Part #:

BQ4011YMA-200-ND

Manufacturer Part#:

BQ4011YMA-200

Price: $ 0.00
Product Category:

Integrated Circuits (ICs)

Manufacturer: Texas Instruments
Short Description: IC NVSRAM 256K PARALLEL 28DIP
More Detail: NVSRAM (Non-Volatile SRAM) Memory IC 256Kb (32K x ...
DataSheet: BQ4011YMA-200 datasheetBQ4011YMA-200 Datasheet/PDF
Quantity: 1000
1 +: 0.00000
Stock 1000Can Ship Immediately
$ 0
Specifications
Series: --
Packaging: Tray 
Part Status: Obsolete
Memory Type: Non-Volatile
Memory Format: NVSRAM
Technology: NVSRAM (Non-Volatile SRAM)
Memory Size: 256Kb (32K x 8)
Write Cycle Time - Word, Page: 200ns
Access Time: 200ns
Memory Interface: Parallel
Voltage - Supply: 4.5 V ~ 5.5 V
Operating Temperature: 0°C ~ 70°C (TA)
Mounting Type: Through Hole
Package / Case: 28-DIP Module (0.61", 15.49mm)
Supplier Device Package: 28-DIP Module (18.42x37.72)
Base Part Number: BQ4011
Description

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The BQ4011YMA-200 is a memory device that plays an important role in a variety of electronic applications. It functions as an electronic storage and retrieval medium, allowing data to be stored and retrieved in an efficient and reliable manner. It is widely used in automotive, aerospace, communication, military, industrial, medical, and consumer electronics.

The BQ4011YMA-200 is a single chip, nonvolatile memory device that has a capacity of up to 200 kilobytes. It has a two-wire interface, which allows it to be used with a variety of different systems. It is based on a rewritable, electrically erasable programmable read-only memory (EEPROM) technology and has a low power consumption of 1.2V.

The BQ4011YMA-200 also has a built-in memory controller, which is responsible for managing the memory device. This memory controller utilizes a serial peripheral interface (SPI) to communicate with the host system, allowing data to be read and written to the memory device with ease. The memory controller also monitors the integrity of the data transferred, and can prevent data corruption.

The BQ4011YMA-200 also offers several features and capabilities. It can be used as either a serial or parallel memory device, and can be programmed in multiple power states. Additionally, it offers both write-protection and error-protection capabilities. It also has built-in system health monitoring functionality, which can help to detect and address issues with the device.

The working principle of the BQ4011YMA-200 involves the magnetic nanocrystals that are formed when an electric current is applied to the device. These nanocrystals act as the storage medium for the data that is inputted into the device. The memory controller determines which nanocrystal is to be written to, and sends an electric current to the nanocrystal to cause it to store the data. To retrieve data from the device, the memory controller will send an electric current to the nanocrystal to cause it to "erase" all the data that is stored in it.

The BQ4011YMA-200 can be used in a variety of applications, including in automotive starters, engine control units, and electrical systems; in computers and communication equipment; and in industrial automation systems. Its non-volatile and data retention capabilities, as well as its low power consumption and error protection capabilities, make it ideal for these applications.

The BQ4011YMA-200 offers a reliable and efficient electronic storage and retrieval solution. Its non-volatile memory and low power consumption capabilities make it an ideal choice for a variety of different applications. It is also easy to use and configure, and offers a range of features that make it ideal for applications requiring robust and reliable memory solutions.

The specific data is subject to PDF, and the above content is for reference

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