BQ4015YMA-70 Allicdata Electronics
Allicdata Part #:

296-9400-5-ND

Manufacturer Part#:

BQ4015YMA-70

Price: $ 0.00
Product Category:

Integrated Circuits (ICs)

Manufacturer: Texas Instruments
Short Description: IC NVSRAM 4M PARALLEL 32DIP
More Detail: NVSRAM (Non-Volatile SRAM) Memory IC 4Mb (512K x 8...
DataSheet: BQ4015YMA-70 datasheetBQ4015YMA-70 Datasheet/PDF
Quantity: 1000
Stock 1000Can Ship Immediately
Specifications
Series: --
Packaging: Tray 
Part Status: Obsolete
Memory Type: Non-Volatile
Memory Format: NVSRAM
Technology: NVSRAM (Non-Volatile SRAM)
Memory Size: 4Mb (512K x 8)
Write Cycle Time - Word, Page: 70ns
Access Time: 70ns
Memory Interface: Parallel
Voltage - Supply: 4.5 V ~ 5.5 V
Operating Temperature: 0°C ~ 70°C (TA)
Mounting Type: Through Hole
Package / Case: 32-DIP Module (0.61", 15.49mm)
Supplier Device Package: 32-DIP Module (18.42x42.8)
Base Part Number: BQ4015
Description

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The BQ4015YMA-70 is a memory component designed for use in electronic communication equipment. It is a high-performance memory device which offers a range of features and functions to provide better performance, energy efficiency and greater flexibility than traditional memory design. The BQ4015YMA-70 features a unique combination of two memory technologies; DRAM (Dynamic Random Access Memory) and EEPROM (Electrically Erasable Programmable Read-Only Memory). The two memory technologies give the device the unique ability to offer both fast random access memory performance and non-volatile data storage. The device is RoHS (Restriction of Hazardous Substances) compliant and meets UL 94V-0 requirements.

As a memory component, the BQ4015YMA-70 is designed to handle large amounts of data quickly and reliably, making it ideal for use in mission-critical applications such as networking, military and avionics. Its dual-technology design also makes it suitable for embedded applications such as printers, modems and automotive applications, where quick access to data storage is critical. It is also suitable for longer-term storage applications, such as logging data for long-term analysis or archiving data for future reference. The device is also well-suited for use in industrial applications where data logging is required.

BQ4015YMA-70 features a unique, single-package design which includes two independent modules. The first module is a high-performance progressive DRAM system which is used as the main memory, while the second module is an EEPROM system which stores non-volatile data. The two systems are connected via an external address/data bus, allowing the two to operate independently while sharing the same physical space. This single-package design offers several advantages, such as faster memory access, more efficient power usage, and space savings.

BQ4015YMA-70 works by transferring data between the two systems via the external address/data bus. The DRAM system is used as the primary memory which handles the data as it is accessed or manipulated, while the secondary EEPROM module is used to store the non-volatile data which needs to be kept for long-term use. This data transfer process is aided by an on-chip DMA controller which handles the address and data transfers between the two memory modules. In addition to the DMA controller, the chip also includes a built-in error correction code (ECC) system which ensures data integrity and reliability. The ECC system is also suitable for use with fault tolerant applications such as automotive and military systems.

The BQ4015YMA-70 is a high-performance memory component which is suitable for different types of applications. Its unique design allows it to be used for both fast access memory applications, such as networking and military, as well as long-term data storage in more stable embedded environments. Its single-package design also makes it a cost-effective solution for many different system designs, while its on-chip ECC system provides extra reliability and data integrity.

The specific data is subject to PDF, and the above content is for reference

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