
Allicdata Part #: | BQ4011MA-200-ND |
Manufacturer Part#: |
BQ4011MA-200 |
Price: | $ 0.00 |
Product Category: | Integrated Circuits (ICs) |
Manufacturer: | Texas Instruments |
Short Description: | IC NVSRAM 256K PARALLEL 28DIP |
More Detail: | NVSRAM (Non-Volatile SRAM) Memory IC 256Kb (32K x ... |
DataSheet: | ![]() |
Quantity: | 1000 |
1 +: | 0.00000 |
Series: | -- |
Packaging: | Tray |
Part Status: | Obsolete |
Memory Type: | Non-Volatile |
Memory Format: | NVSRAM |
Technology: | NVSRAM (Non-Volatile SRAM) |
Memory Size: | 256Kb (32K x 8) |
Write Cycle Time - Word, Page: | 200ns |
Access Time: | 200ns |
Memory Interface: | Parallel |
Voltage - Supply: | 4.75 V ~ 5.5 V |
Operating Temperature: | 0°C ~ 70°C (TA) |
Mounting Type: | Through Hole |
Package / Case: | 28-DIP Module (0.61", 15.49mm) |
Supplier Device Package: | 28-DIP Module (18.42x37.72) |
Base Part Number: | BQ4011 |
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BQ4011MA-200 Application Field and Working Principle
The BQ4011MA-200 is a high-precision, low-power Memory ideal for a wide range of applications in automotive, industrial and consumer markets. This device is a small capacity SRAM which supports read/write operations via a serial bus. It is built with a stable and secure power supply, operating temperature range and a large package size. In addition, it is a low-cost, reliable memory solution that is easy to use.
Application Field
The BQ4011MA-200 is especially suited for applications that need to store and retrieve data reliably and quickly. These include automotive navigation systems, industrial electronic devices, and consumer electronic devices. This device can also be used for memory applications that require secure storage and logging of data, such as in road traffic monitoring systems or file crypto systems. In addition, its small size, wide temperature range and secure power supply make the BQ4011MA-200 an enticing choice for various industrial and automotive applications.
Working Principle
The working principle of the BQ4011MA-200 is based on a simple serial architecture. This device stores a single bit of data (1 or 0) in a memory cell. The memory cells of this device are organized into a matrix of address locations, which can store data. In addition, it also has an external control unit to take care of the necessary address and data input/output operations.
The BQ4011MA-200 uses a simple protocol for data transfer. When data is written to the device, the address of the memory locations and the data are provided to the external control unit. The control unit then writes the data in the corresponding memory cell. When the data is to be read, the external control unit first reads the address information. It then reads the memory cells in the matrix that hold the data and sends it to an external device.
In order to ensure reliability and efficient operation, the BQ4011MA-200 is built with an Advanced Power-down Mode (APM) feature. The APM feature enables the SRAM to save energy during periods when no data is being written or read. Additionally, it includes a self-timed erase and write feature which ensures that each cell is accurately written to and erased before the next operation.
Overall, the BQ4011MA-200 is designed to deliver superior performance with minimal energy consumption. Its size, reliability and features make it an attractive memory solution for various industrial, automotive, and consumer applications.
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