BQ4011MA-200 Allicdata Electronics
Allicdata Part #:

BQ4011MA-200-ND

Manufacturer Part#:

BQ4011MA-200

Price: $ 0.00
Product Category:

Integrated Circuits (ICs)

Manufacturer: Texas Instruments
Short Description: IC NVSRAM 256K PARALLEL 28DIP
More Detail: NVSRAM (Non-Volatile SRAM) Memory IC 256Kb (32K x ...
DataSheet: BQ4011MA-200 datasheetBQ4011MA-200 Datasheet/PDF
Quantity: 1000
1 +: 0.00000
Stock 1000Can Ship Immediately
$ 0
Specifications
Series: --
Packaging: Tray 
Part Status: Obsolete
Memory Type: Non-Volatile
Memory Format: NVSRAM
Technology: NVSRAM (Non-Volatile SRAM)
Memory Size: 256Kb (32K x 8)
Write Cycle Time - Word, Page: 200ns
Access Time: 200ns
Memory Interface: Parallel
Voltage - Supply: 4.75 V ~ 5.5 V
Operating Temperature: 0°C ~ 70°C (TA)
Mounting Type: Through Hole
Package / Case: 28-DIP Module (0.61", 15.49mm)
Supplier Device Package: 28-DIP Module (18.42x37.72)
Base Part Number: BQ4011
Description

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BQ4011MA-200 Application Field and Working Principle

The BQ4011MA-200 is a high-precision, low-power Memory ideal for a wide range of applications in automotive, industrial and consumer markets. This device is a small capacity SRAM which supports read/write operations via a serial bus. It is built with a stable and secure power supply, operating temperature range and a large package size. In addition, it is a low-cost, reliable memory solution that is easy to use.

Application Field

The BQ4011MA-200 is especially suited for applications that need to store and retrieve data reliably and quickly. These include automotive navigation systems, industrial electronic devices, and consumer electronic devices. This device can also be used for memory applications that require secure storage and logging of data, such as in road traffic monitoring systems or file crypto systems. In addition, its small size, wide temperature range and secure power supply make the BQ4011MA-200 an enticing choice for various industrial and automotive applications.

Working Principle

The working principle of the BQ4011MA-200 is based on a simple serial architecture. This device stores a single bit of data (1 or 0) in a memory cell. The memory cells of this device are organized into a matrix of address locations, which can store data. In addition, it also has an external control unit to take care of the necessary address and data input/output operations.

The BQ4011MA-200 uses a simple protocol for data transfer. When data is written to the device, the address of the memory locations and the data are provided to the external control unit. The control unit then writes the data in the corresponding memory cell. When the data is to be read, the external control unit first reads the address information. It then reads the memory cells in the matrix that hold the data and sends it to an external device.

In order to ensure reliability and efficient operation, the BQ4011MA-200 is built with an Advanced Power-down Mode (APM) feature. The APM feature enables the SRAM to save energy during periods when no data is being written or read. Additionally, it includes a self-timed erase and write feature which ensures that each cell is accurately written to and erased before the next operation.

Overall, the BQ4011MA-200 is designed to deliver superior performance with minimal energy consumption. Its size, reliability and features make it an attractive memory solution for various industrial, automotive, and consumer applications.

The specific data is subject to PDF, and the above content is for reference

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