BQ4010YMA-200 Allicdata Electronics
Allicdata Part #:

BQ4010YMA-200-ND

Manufacturer Part#:

BQ4010YMA-200

Price: $ 0.00
Product Category:

Integrated Circuits (ICs)

Manufacturer: Texas Instruments
Short Description: IC NVSRAM 64K PARALLEL 28DIP
More Detail: NVSRAM (Non-Volatile SRAM) Memory IC 64Kb (8K x 8)...
DataSheet: BQ4010YMA-200 datasheetBQ4010YMA-200 Datasheet/PDF
Quantity: 1000
1 +: 0.00000
Stock 1000Can Ship Immediately
$ 0
Specifications
Series: --
Packaging: Tray 
Part Status: Obsolete
Memory Type: Non-Volatile
Memory Format: NVSRAM
Technology: NVSRAM (Non-Volatile SRAM)
Memory Size: 64Kb (8K x 8)
Write Cycle Time - Word, Page: 200ns
Access Time: 200ns
Memory Interface: Parallel
Voltage - Supply: 4.5 V ~ 5.5 V
Operating Temperature: 0°C ~ 70°C (TA)
Mounting Type: Through Hole
Package / Case: 28-DIP Module (0.61", 15.49mm)
Supplier Device Package: 28-DIP Module (18.42x37.72)
Base Part Number: BQ4010
Description

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Memory

BQ4010YMA-200 is a Memory type device used in a variety of applications, particularly consumer electronics. It is usually used to store and access data quickly and easily. The device has two memory banks, one of which is the primary memory bank, and the other is the secondary memory bank. It also has various control and status registers.

Application Field

BQ4010YMA-200 is most often used in digital equipment such as embedded systems, mobile phones and game console. It is also widely used for digital signal processing and for a variety of applications, such as data storage in microcontrollers, data buffering in industrial automation, and memory datasheets in applications. It can also be found in embedded systems, such as in electronic toys, robotic toys and medical equipment.

Working Principle

The two memory banks of BQ4010YMA-200 provide a maximum amount of data storage. The primary memory bank is used for the program code and data, while the secondary memory bank is used for the variables used by the device. The primary memory bank is usually divided into two sections, one for the program code and the other for the data. Both primary and secondary memory banks can be configured with either static random access memory (SRAM) or dynamic random access memory (DRAM).

The device is also equipped with various control and status registers. These registers are used for different functions, such as the configuration of the memory banks, the setting of the data bus signals and the writing of pattern data. Other registers, such as status register, interrupt flag register and interrupt vector register, are also used.

BQ4010YMA-200 memory device also features automatic refresh capability, whereby the device automatically refreshes and rewrites data in the memory banks. This feature is useful in applications where data needs to be retrieved quickly or when data needs to be preserved. This feature requires that the device has a refresh control register. This register can be set to refresh a specified amount of data.

The specific data is subject to PDF, and the above content is for reference

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