BSA223SP Allicdata Electronics
Allicdata Part #:

BSA223SPINTR-ND

Manufacturer Part#:

BSA223SP

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: Infineon Technologies
Short Description: MOSFET P-CH 20V 390MA SC75
More Detail: P-Channel 20V 390mA (Ta) 250mW (Ta) Surface Mount ...
DataSheet: BSA223SP datasheetBSA223SP Datasheet/PDF
Quantity: 1000
Stock 1000Can Ship Immediately
Specifications
Vgs(th) (Max) @ Id: 1.2V @ 1.5µA
Package / Case: SC-75, SOT-416
Supplier Device Package: PG-SC-75
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 250mW (Ta)
FET Feature: --
Input Capacitance (Ciss) (Max) @ Vds: 56pF @ 15V
Vgs (Max): ±12V
Gate Charge (Qg) (Max) @ Vgs: 0.62nC @ 4.5V
Series: OptiMOS™
Rds On (Max) @ Id, Vgs: 1.2 Ohm @ 390mA, 4.5V
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Current - Continuous Drain (Id) @ 25°C: 390mA (Ta)
Drain to Source Voltage (Vdss): 20V
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Part Status: Discontinued at Digi-Key
Packaging: Tape & Reel (TR) 
Description

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BSA223SP is a high voltage P-Channel Enhancement Mode Field Effect Transistor (FET). It can operate in the -100V to -25V voltage range and can handle up to 5A of continuous current. It is designed for applications such as power-supply input protection, reverse polarity protection, high-side switching and load current sensing.

The basic operating principle of an FET is the same as that of a transistor. It works on the principle of a reverse-biased junction, which is referred to as the \'gate-drain\' junction. When a voltage is applied to the gate, a depletion zone forms between the gate and the drain. This semiconductor area forms an electronic barrier, which controls the flow of current through the transistor. When the voltage applied to the gate is increased, the depletion zone widens and the transistor\'s source-drain resistance increases, thus reducing the flow of current. Conversely, when the voltage of the gate is decreased, the depletion zone narrows and the source-drain resistance decreases, thereby increasing the current.

The BSA223SP is a low on resistance (Rdson) FET that requires very little gate current and has a low gate input capacitance. This makes it ideal for applications that require low gate charge and low ON resistance. It also has a low input and output capacitance, which helps to minimize the inductance of the devices when driving high power MOSFETs. In addition, it has a fast switching time, which helps to reduce power dissipation and improve the performance of the system.

The BSA223SP has a range of features that make it suitable for a wide variety of applications. Its high surge capability, combined with its low on resistance, allows it to be used in low voltage switching applications, such as motor control and DC-DC converters. It is also suitable for use in high-side switching applications, such as Series Regulators, where its increased on resistance can be beneficial in controlling current. Its low on resistance makes it suitable for high frequency switching applications, such as power MOSFETs and IGBTs. Additionally, its low input and output capacitance help to reduce the inductance of the devices when switching high power MOSFETs.

The BSA223SP is the ideal choice for applications that require the highest levels of performance, reliability and cost savings. Its advanced design and reliable functioning make it suitable for a wide range of applications. From power conversion to motor control and from low voltage to high voltage switching, the BSA223SP is the perfect choice.

The specific data is subject to PDF, and the above content is for reference

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