BSB165N15NZ3GXUMA1

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The BSB165N15NZ3GXUMA1 is an insulated-gate-bipolar-transistor (IGBT) device commonly used for high power applications such as power supplies, motor drives, and other high voltage DC-DC converters. This article will explore the application fields and working principle of the BSB165N15NZ3GXUMA1 in detail.

Features and Application

The BSB165N15NZ3GXUMA1 is designed to efficiently handle high power switching applications with operating voltages of 15 volts and a typical collector-emitter breakdown voltage of 165 volts. The device also features a wide on-state drain current handling capacity of up to 15 A with a gate-source voltage range of 10 V. With a low on-state resistance of around 3.3 mΩ, the device keeps power consumption extremely low and improves system performance. The BSB165N15NZ3GXUMA1’s short circuit protection and controlled short circuit limit makes it a suitable and safe choice for static inverter, power supply, motor driver and other high voltage DC-DC applications.

When used as a power discretes, the BSB165N15NZ3GXUMA1 provides a wide range of applications. It is ideal for Server Power Supply, Variable Frequency Driver Control (VFCs), Uninterruptible Power Supply (UPS), Motor Control and other Power Control applications. Its high power handling and low on-state resistance makes it a versatile device, able to be used in a variety of applications.

Working Principle

The BSB165N15NZ3GXUMA1 is an insulated-gate-bipolar-transistor (IGBT) device which is commonly used for medium to high power switching. IGBTs combine the benefits of MOSFETs (efficient switching) and BJTs (high current capacity) to create a device that can handle both low and high voltage applications. IGBTs are used for both AC and DC switching and have a very low on-resistance. This means that their power losses are much lower than other technologies such as BJTs or MOSFETs.

The working of IGBTs is based on a modified form of the MOSFET structure. In addition to source and drain terminals, an IGBT also has a third terminal called the gate. The gate acts like a bridge between the source and the drain. When a positive gate voltage is applied, electrons are repelled from the gate and holes are attracted towards the gate, forming an inversion layer which conducts current. The conduction of current between the source and the drain depends on the gate voltage, with higher gate voltages resulting in higher current conduction. Thus, by controlling the gate voltage, the IGBT can be used to switch the current between the source and the drain.

The BSB165N15NZ3GXUMA1 is an advanced Force-spaced IGBT device which features improved switching performance over its predecessors. The combination of these improved features makes the device a suitable choice for high voltage DC-DC converters, power supplies and motor drives.

Conclusion

The BSB165N15NZ3GXUMA1 is an IGBT device which has a wide range of applications in high power switching, with operating voltages of 15 volts and a typical collector-emitter breakdown voltage of 165 volts. The device also features a wide on-state drain current handling capacity of up to 15 A with a gate-source voltage range of 10 V. Its short circuit protection and controlled short circuit limit makes it a safe choice for static inverter, power supply, motor driver and other high voltage DC-DC applications. The working of IGBTs is based on a modified form of the MOSFET structure and by controlling the gate voltage, the IGBT can be used to switch the current between the source and the drain. The BSB165N15NZ3GXUMA1’s features make it a suitable choice for high power applications such as power supplies, motor drives, and other high voltage DC-DC converters.

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