BSB280N15NZ3GXUMA1 Discrete Semiconductor Products |
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Allicdata Part #: | BSB280N15NZ3GXUMA1TR-ND |
Manufacturer Part#: |
BSB280N15NZ3GXUMA1 |
Price: | $ 0.83 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Infineon Technologies |
Short Description: | MOSFET N-CH 150V 9A WDSON-2 |
More Detail: | N-Channel 150V 9A (Ta), 30A (Tc) 2.8W (Ta), 57W (T... |
DataSheet: | BSB280N15NZ3GXUMA1 Datasheet/PDF |
Quantity: | 1000 |
5000 +: | $ 0.74029 |
Vgs(th) (Max) @ Id: | 4V @ 60µA |
Package / Case: | 3-WDSON |
Supplier Device Package: | MG-WDSON-2, CanPAK M™ |
Mounting Type: | Surface Mount |
Operating Temperature: | -40°C ~ 150°C (TJ) |
Power Dissipation (Max): | 2.8W (Ta), 57W (Tc) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 1600pF @ 75V |
Vgs (Max): | ±20V |
Gate Charge (Qg) (Max) @ Vgs: | 21nC @ 10V |
Series: | OptiMOS™ |
Rds On (Max) @ Id, Vgs: | 28 mOhm @ 30A, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 10V |
Current - Continuous Drain (Id) @ 25°C: | 9A (Ta), 30A (Tc) |
Drain to Source Voltage (Vdss): | 150V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | N-Channel |
Part Status: | Active |
Packaging: | Tape & Reel (TR) |
Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us: sales@allicdata.com
BSB280N15NZ3GXUMA1, a type of transistor, is a kind of Field Effect Transistor (FET). FETs completely control the on/off transistor of current using an electric field. They are frequently used as switches or amplifiers, and because of their high input impedance and low power requirements, they are used in signal processing circuits in a wide range of applications. In comparison to BJT’s, FETs are faster and can handle a wider current range.
BSB280N15NZ3GXUMA1 belongs to the single FET class, meaning each FET has only a source and drain, but no gate. Thus, the gate connection is designed in a way that it needs to be shorted for the device to be ON. This FET is made up of a P channel MOSFET that is specifically used to switch an N channel device. This allows the current in an N channel device to be controlled by the logic level of the P channel MOSFET.
BSB280N15NZ3GXUMA1 is usually used in power circuits, and can be used to control large currents in power applications where few other devices have the power ratings to achieve the same results. It is used in applications that require a fast switching speed, such as electric motor controllers, inverters, power supplies, and bidirectional energy transfer. It is also used to drive motors, operate solenoids, and regulate power for LED lighting grids. This type of FET is also often used for high efficiency switching, such as in solar and battery charging applications.
The working principle of the BSB280N15NZ3GXUMA1 FET is very simple. It uses an electric field to control the current. The electric filed is generated by applying a voltage to the gate of the FET. When a voltage is applied to the gate, it induces an electric field in the FET, which causes a current to flow in the channel between the source and drain terminals. By controlling the gate voltage, the level of current flowing through the FET can be dynamically changed.
In comparison to BJTs, FETs are more efficient, have lower power consumption and their smaller size makes them a great choice for applications where space is at a premium. Additionally, FETs are also more reliable than BJTs, since their performance can be accurately predicted. This makes them extremely useful for circuits that need to be switched on and off quickly and accurately.
The BSB280N15NZ3GXUMA1 FET is a great choice for a wide range of applications. It offers the power ratings and switching speed required in many power applications, and it is also an extremely reliable device that is easy to integrate into circuits. Its small size, low power consumption and high efficiency make it an especially attractive choice for applications where space is limited or power consumption is a concern.
The specific data is subject to PDF, and the above content is for reference
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