![BSC360N15NS3GATMA1 Allicdata Electronics](https://files.allicdata.com/upload/common/default.jpg)
Allicdata Part #: | BSC360N15NS3GATMA1TR-ND |
Manufacturer Part#: |
BSC360N15NS3GATMA1 |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Infineon Technologies |
Short Description: | MOSFET N-CH 150V 33A 8TDSON |
More Detail: | N-Channel 150V 33A (Tc) 74W (Tc) Surface Mount PG-... |
DataSheet: | ![]() |
Quantity: | 1000 |
Vgs(th) (Max) @ Id: | 4V @ 45µA |
Package / Case: | 8-PowerTDFN |
Supplier Device Package: | PG-TDSON-8 |
Mounting Type: | Surface Mount |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Power Dissipation (Max): | 74W (Tc) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 1190pF @ 75V |
Vgs (Max): | ±20V |
Gate Charge (Qg) (Max) @ Vgs: | 15nC @ 10V |
Series: | OptiMOS™ |
Rds On (Max) @ Id, Vgs: | 36 mOhm @ 25A, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 8V, 10V |
Current - Continuous Drain (Id) @ 25°C: | 33A (Tc) |
Drain to Source Voltage (Vdss): | 150V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | N-Channel |
Part Status: | Active |
Packaging: | Tape & Reel (TR) |
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BSC360N15NS3GATMA1 is a transistor belonging to the class of field-effect transistors (FETs). It features a single-MOSFET, meaning it has only one gate, along with one source and one drain.The device is used in a wide variety of applications in both professional and consumer electronics. It is capable of high switching speeds and its symmetrical structure makes it more predictable and easier to work with. Its low drain-source resistance makes it ideal for efficient switching of minimal voltages, making it a popular choice for logic circuitry and digital circuits that require low-level, fast transistor switching.Due to its size, the BSC360N15NS3GATMA1 transistor is typically used for portable devices and digital systems, where space availability is at a premium. The FET’s low current consumption also makes it suitable for applications where battery drainage is a concern.In operation, the device works based on the physical principles of a transistor. When a voltage is applied to the transistor’s gate, it modifies the resistance between the collector and emitter terminals. When the gate voltage is higher than the source voltage, the resistance drops, effectively allowing current to flow through the transistor and thereby connecting the collector and emitter. An analog signal can be amplified or altered by varying the gate voltage.The BSC360N15NS3GATMA1 is also known as a “self-biased” transistor, meaning it does not require an external biasing resistor such as would be the case with a bipolar junction transistor. This makes it even more ideal for digital electronics circuits, as it simplifies the design and implementation, and makes the device more compact.The FET’s closely nested gate, source and drain electrodes make it particularly resistant to switching noise, meaning it can maintain a more consistent current flow than some other transistors. In addition, the device has a strong tolerance to temperature shifts, meaning it is less likely to malfunction due to sudden temperature changes.Overall, the BSC360N15NS3GATMA1 is a highly versatile transistor that can be used in a wide range of applications. Its combination of low current consumption, high switching speeds, and resistance against switching noise make it an ideal choice for many logic and digital circuits. Its self-biased design also simplifies the process of design and implementation.
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