BSD340NH6327XTSA1 Allicdata Electronics
Allicdata Part #:

BSD340NH6327XTSA1-ND

Manufacturer Part#:

BSD340NH6327XTSA1

Price: $ 0.08
Product Category:

Discrete Semiconductor Products

Manufacturer: Infineon Technologies
Short Description: SMALL SIGNAL+P-CH
More Detail: Mosfet Array Surface Mount PG-SOT363-6
DataSheet: BSD340NH6327XTSA1 datasheetBSD340NH6327XTSA1 Datasheet/PDF
Quantity: 1000
3000 +: $ 0.07718
Stock 1000Can Ship Immediately
$ 0.08
Specifications
Series: *
Packaging: Tape & Reel (TR) 
Part Status: Not For New Designs
Mounting Type: Surface Mount
Package / Case: 6-VSSOP, SC-88, SOT-363
Supplier Device Package: PG-SOT363-6
Description

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Arrays and MOSFETs: BSD340NH6327XTSA1

The BSD340NH6327XTSA1 transistor array is a small-signal MOSFET device designed for general digital switching applications. It is widely used in consumer electronics and communication systems in order to provide power amplification or low-level driving of switching elements. The BSD340NH6327XTSA1 transistor array has an internal structure that allows it to be used as either a field-effect transistor (FET) or a metal-oxide semiconductor FET (MOSFET).A typical transistor array arrangement consists of four transistors arranged in an array, along with two resistors and two capacitors. This arrangement allows the device to be used in a variety of applications, including power switching, level shifting, and protection circuitry. The BSD340NH6327XTSA1 transistor array is a great option for devices that require very low-level switching, high-speed digital operations, and low-voltage current driving.

Features

The BSD340NH6327XTSA1 transistor array is available in a TSSOP package. This compact package is the most suitable package for applications that require Power-Amplifier FETs or Low-Level driving. The device has a total gate charge of 0.95 que, a gate threshold voltage of 1.8V, and a breakdown voltage of 20V. It operates over a wide junction temperature range and comes in a low-power version as well.The device also features a low-power operating mode with a maximum power dissipation of 50mW. This operating mode offers improved efficiency when utilized in switching applications. In addition, the device also features a zero gate-source voltage system, ensuring low-level signals can be generated without the risk of damage to the FET. In order to promote device stability, the BSD340NH6327XTSA1 device has an on-resistance matching capability which allows for precise device calibration to promote accuracy when switching.

Application Field and Working Principle

The BSD340NH6327XTSA1 transistor array is primarily used in switching applications, where it can replace standard logic, transistors, and other power devices. It is typically used in digital, analog, and input-output switching applications in order to provide higher bandwidth and improved efficiency.In order to understand the working principle of the BSD340NH6327XTSA1 device, it is helpful to understand how it works in the context of a MOSFET. A MOSFET is essentially a switching element where the output current is proportional to the gate voltage applied. As the gate voltage is increased, the MOSFET places more current into the drain terminal and thus more power is consumed. The BSD340NH6327XTSA1 uses an array of transistors to amplify the gate voltage, allowing for greater power outputs.The BSD340NH6327XTSA1 capability for high power switching, its low-power operating mode, and its precise on-resistance matching capability combine to make it the ideal option for switching applications in consumer electronics and communication systems. It is an efficient, reliable, and versatile device that can be used in a wide range of applications.

The specific data is subject to PDF, and the above content is for reference

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