BSD314SPEH6327XTSA1 Allicdata Electronics
Allicdata Part #:

BSD314SPEH6327XTSA1-ND

Manufacturer Part#:

BSD314SPEH6327XTSA1

Price: $ 0.08
Product Category:

Discrete Semiconductor Products

Manufacturer: Infineon Technologies
Short Description: MOSFET P-CH 30V 1.5A SOT363
More Detail: P-Channel 30V 1.5A (Ta) 500mW (Ta) Surface Mount P...
DataSheet: BSD314SPEH6327XTSA1 datasheetBSD314SPEH6327XTSA1 Datasheet/PDF
Quantity: 1000
9000 +: $ 0.06738
Stock 1000Can Ship Immediately
$ 0.08
Specifications
Vgs(th) (Max) @ Id: 2V @ 6.3µA
Package / Case: 6-VSSOP, SC-88, SOT-363
Supplier Device Package: PG-SOT363-6
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 500mW (Ta)
FET Feature: --
Input Capacitance (Ciss) (Max) @ Vds: 294pF @ 15V
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 2.9nC @ 10V
Series: OptiMOS™
Rds On (Max) @ Id, Vgs: 140 mOhm @ 1.5A, 10V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Current - Continuous Drain (Id) @ 25°C: 1.5A (Ta)
Drain to Source Voltage (Vdss): 30V
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Part Status: Active
Packaging: Tape & Reel (TR) 
Description

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The BSD314SPEH6327XTSA1 is a sophisticated device from the transistors family that exhibits extremely efficient performance. It is a single-type metal oxide semiconductor field effect transistor (MOSFET) that has become increasingly popular in a variety of industries, ranging from medical and automotive equipment to power converters, converters and switching controllers. Based on its superior features and advantages, this FET (field effect transistor) is proving to be quite valuable in a variety of applications.

The MOSFET offers the user a number of advantages over the traditional transistor, including higher switching speeds, improved modulation characteristics, and reduced losses through controlled avalanche current and dissipation. This technology also permits a wider range of device design parameters, allowing for a much greater degree of customization for the current applications. In addition, the device\'s higher input impedance can significantly increase voltage levels and reduce the power loss in comparison to other FETs.

In terms of performance, the BSD314SPEH6327XTSA1 offers an extremely efficient switching speed and low switching loss. This makes it ideal for applications that require high-speed signal processing or heavy data processing. Additionally, its extremely high switching frequency also allows it to operate in the gigahertz range, providing an extremely high degree of accuracy and precision. Furthermore, the device\'s power consumption is also significantly lower than that of more traditional transistors.

In applications where the FET is used in a power source, such as in a power converter or switches, the device\'s high performance and low power consumption provides significant advantages. The FET also provides excellent heat dissipation, making it well suited for use in high-power applications. Additionally, its high switching speed allows it to be used in a variety of ways including pulse-width modulators, pulse-frequency modulation, pulse-width modulation and pulse-delay modulation.

In terms of design and construction of the BSD314SPEH6327XTSA1, it is designed specifically to provide superior performance in a range of applications. The package has been designed to be robust and reliable, providing excellent cooling and heat dissipation. It is also highly resistant to environmental stressors, such as vibration, shock and temperature. Additionally, its built-in self-test capabilities ensure that any faults are quickly identified and corrected, and its extensive protection features protect it from tampering and accidental destruction.

The BSD314SPEH6327XTSA1 is a popular solution for many industries and applications due to its high performance, large power capacity, and low power consumption. Additionally, the FET\'s performance and reliability make it an ideal solution for a wide range of situations, including those requiring high-speed signal processing, as well as those that require reliable, low-power solutions. Overall, the device is highly recommended for applications requiring a reliable, low-power solution for switching or signal processing.

The specific data is subject to PDF, and the above content is for reference

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