BSD314SPEL6327HTSA1

Vgs(th) (Max) @ Id:	2V @ 6.3µA
Package / Case:	6-VSSOP, SC-88, SOT-363
Supplier Device Package:	PG-SOT363-6
Mounting Type:	Surface Mount
Operating Temperature:	-55°C ~ 150°C (TJ)
Power Dissipation (Max):	500mW (Ta)
FET Feature:	--
Input Capacitance (Ciss) (Max) @ Vds:	294pF @ 15V
Vgs (Max):	±20V
Gate Charge (Qg) (Max) @ Vgs:	2.9nC @ 10V
Series:	OptiMOS™
Rds On (Max) @ Id, Vgs:	140 mOhm @ 1.5A, 10V
Drive Voltage (Max Rds On, Min Rds On):	4.5V, 10V
Current - Continuous Drain (Id) @ 25°C:	1.5A (Ta)
Drain to Source Voltage (Vdss):	30V
Technology:	MOSFET (Metal Oxide)
FET Type:	P-Channel
Part Status:	Obsolete
Packaging:	Tape & Reel (TR)

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Introduction

The acronym BSD314SPEL6327HTSA1 stands for a type of Single Enhancement Mode Power MOSFET (metal–oxide–semiconductor field-effect transistor). Power MOSFETs provide superior power handling and switching speeds compared to their BJT (bipolar junction transistor) counterparts. As a result, they are a popular choice for use in a variety of power-sensitive applications, from consumer electronics to industrial control systems. In this article, we will explore the features of BSD314SPEL6327HTSA1, the application fields in which the device can be found, and its underlying working principle.

Features

The BSD314SPEL6327HTSA1 is manufactured with an Enhanced-Thick-Oxide process with an N-channel, enhancement-mode structure. The device can handle currents up to 1.7A, with a maximum drain-source voltage (Vds) of 30V. It also features gate charge (Qg) of 1.3nC and a threshold voltage of 1.7V. It has low power losses due to its low on-state resistance (RDSon) and tight parameter distribution which gives it excellent thermal stability. The BSD314SPEL6327HTSA1 also has intrinsic avalanche energy rated from 75mJ to 200mJ.

Application Fields

The BSD314SPEL6327HTSA1 is suited for a wide range of applications, including power applications and telecoms, automotive systems, battery charger systems, and consumer electronics. The device can also be used for high-side switching and power sequencing in motor control applications due to its high linear current and low on-state resistance.

Working Principle

The BSD314SPEL6327HTSA1 is an enhancement-mode power MOSFET. This indicates that the device requires a voltage (Vgs) greater than the threshold voltage (Vth) to begin conducting current. Vth is typically 1.7V for this device. As Vgs is increased above Vth, the device begins to conduct current between the drain and source and the voltage drop across the channel (Vds) increases accordingly. As Vgs continues to increase beyond Vth, the resistance of the channel continuously decreases, resulting in increased current flow. When Vds equals Vth, the Drain-Source voltage (Vds) is equal to the threshold voltage and the device is in its saturation region. At this point, the channel acts like a short circuit and current flows through with negligible resistance.

Conclusion

In conclusion, the BSD314SPEL6327HTSA1 is a popular Single Enhancement Mode Power MOSFET that provides superior power handling, low power losses, and tight parameter distribution. It is well suited for a wide range of applications, including power applications and telecoms, automotive systems, battery charger systems, and consumer electronics. The device requires a Vgs greater than the threshold voltage, Vth, to begin conducting current. When Vgs equals Vth, the device is in its saturation region and the channel acts like a short circuit, allowing for a current flow with negligible resistance.

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