| Allicdata Part #: | BSD316SNL6327XTTR-ND |
| Manufacturer Part#: |
BSD316SNL6327XT |
| Price: | $ 0.00 |
| Product Category: | Discrete Semiconductor Products |
| Manufacturer: | Infineon Technologies |
| Short Description: | MOSFET N-CH 30V 1.4A SOT-363 |
| More Detail: | N-Channel 30V 1.4A (Ta) 500mW (Ta) Surface Mount P... |
| DataSheet: | BSD316SNL6327XT Datasheet/PDF |
| Quantity: | 1000 |
| 1 +: | 0.00000 |
| Vgs(th) (Max) @ Id: | 2V @ 3.7µA |
| Package / Case: | 6-VSSOP, SC-88, SOT-363 |
| Supplier Device Package: | PG-SOT363-6 |
| Mounting Type: | Surface Mount |
| Operating Temperature: | -55°C ~ 150°C (TJ) |
| Power Dissipation (Max): | 500mW (Ta) |
| FET Feature: | -- |
| Input Capacitance (Ciss) (Max) @ Vds: | 94pF @ 15V |
| Vgs (Max): | ±20V |
| Gate Charge (Qg) (Max) @ Vgs: | 0.6nC @ 5V |
| Series: | OptiMOS™ |
| Rds On (Max) @ Id, Vgs: | 160 mOhm @ 1.4A, 10V |
| Drive Voltage (Max Rds On, Min Rds On): | 4.5V, 10V |
| Current - Continuous Drain (Id) @ 25°C: | 1.4A (Ta) |
| Drain to Source Voltage (Vdss): | 30V |
| Technology: | MOSFET (Metal Oxide) |
| FET Type: | N-Channel |
| Part Status: | Obsolete |
| Packaging: | Tape & Reel (TR) |
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A BSD316SNL6327XT is a single-channel MOSFET with a low-voltage threshold. This MOSFET is a three-terminal transistor that includes N-channel MOSFETs and P-channel MOSFETs, plus other variations. They offer several advantages over other types of transistors and are often used in applications where higher speed and/or efficiency are necessary. This article will discuss the application field and working principle of the BSD316SNL6327XT.
BSO316SNL6327XT Application Field
The BSD316SNL6327XT is designed for use in consumer electronic products, such as mobile phones, digital cameras, and other consumer-grade electronics. It is also used in many industrial and medical applications where it is beneficial to have a higher speed and/or efficiency than the traditional BJT (bipolar junction transistor) can offer. In medical applications, it can be used for signal processing, electromechanical actuation, and power control.
The BSO316SNL6327XT is also used for signal amplification in many industrial applications. This MOSFET is capable of working with low frequency signals as well as higher frequency signals, which makes it a great choice for high frequency switching applications. Additionally, the BSO316SNL6327XT is able to operate at higher temperatures than the traditional BJT, which can offer benefits in applications that require heat dissipation.
BSO316SNL6327XT Working Principle
The BSO316SNL6327XT is a single-channel MOSFET that operates based on the principle of diode rectification. This MOSFET has an insulated gate that shields the semiconductor channel from external voltage. The gate current flows through the insulator, which is made of a dielectric material such as silicon dioxide or gallium arsenide. The gate voltage controls the current or voltage into the channel region by modulating the width of the channel that is created. By changing the gate voltage, the device can be used to control the current or voltage into the channel region.
The BSO316SNL6327XT is also known as an MOSFET (metal-oxide-semiconductor field-effect transistor). This type of transistor is a power switching device that can be used to control the current and voltage into the channel region. The MOSFET can be used in a variety of applications, from amplifiers to power control. By applying a control voltage to the gate, the MOSFET can be used to switch current on or off in the channel region.
The BSO316SNL6327XT is a great device to consider for applications such as power switching, signal amplification, and voltage control. It offers the advantages of high speed and/or efficiency compared to traditional BJTs and can be used in a variety of applications. The design of the MOSFET also simplifies many of the problems associated with BJTs and allows for a source of reliable and efficient power control.
The specific data is subject to PDF, and the above content is for reference
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BSD316SNL6327XT Datasheet/PDF