BSF134N10NJ3GXUMA1 Discrete Semiconductor Products

Vgs(th) (Max) @ Id:	3.5V @ 40µA
Package / Case:	3-WDSON
Supplier Device Package:	MG-WDSON-2, CanPAK M™
Mounting Type:	Surface Mount
Operating Temperature:	-40°C ~ 150°C (TJ)
Power Dissipation (Max):	2.2W (Ta), 43W (Tc)
FET Feature:	--
Input Capacitance (Ciss) (Max) @ Vds:	2300pF @ 50V
Vgs (Max):	±20V
Gate Charge (Qg) (Max) @ Vgs:	30nC @ 10V
Series:	OptiMOS™
Rds On (Max) @ Id, Vgs:	13.4 mOhm @ 30A, 10V
Drive Voltage (Max Rds On, Min Rds On):	6V, 10V
Current - Continuous Drain (Id) @ 25°C:	9A (Ta), 40A (Tc)
Drain to Source Voltage (Vdss):	100V
Technology:	MOSFET (Metal Oxide)
FET Type:	N-Channel
Part Status:	Active
Packaging:	Tape & Reel (TR)

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BSF134N10NJ3GXUMA1 Applications and Working Principle

The BSF134N10NJ3GXUMA1 is a type of DMOS (Double Diffused Metal-Oxide Semiconductor) power transistor, classified as a Field-Effect Transistor (FET) with multiple drain sources. It is the most exclusively used component in power electronics across a vast range of applications, from furnaces, DC-voltage regulators, energy meters, UPS inverters, electric appliances, and power amplifiers like in audio devices.FETs are three-terminal semiconductor devices that are used for controlling the flow of electricity in various applications. A FET is like a valve, in that it allows electrical current or voltage to flow or prevents it from flowing, depending on the voltage applied to its gate. The BSF134N10NJ3GXUMA1 can be used as an electronic switch to control the electric current flow in circuits, and its operation is the same as of any other FET.The BSF134N10NJ3GXUMA1 has a gate terminal located between the source and drain which is used to control the flow of electric current through the source-drain region. Applying a positive voltage to the gate terminal will create a conductive region between the source and drain, thus allowing electric current to flow. Applying a negative voltage to the gate terminal will turn off the device, thus disallowing electric current to pass through. It is important to note that the operating voltage of this FET is as low as 10V, thus enabling it to work with relatively low voltage applications. The maximum drain current of the BSF134N10NJ3GXUMA1 is 100mA, making it suitable for relatively low power applications.The BSF134N10NJ3GXUMA1 has a maximum drain-to-source on-state resistance (RDSON) of 10 Ω. Additionally, the channel length of this FET is 0.13 μm, and its channel width is 1.5 μm. The BSF134N10NJ3GXUMA1 has a maximum power dissipation of 400 mW and a maximum operating temperature of 150 °C.The BSF134N10NJ3GXUMA1 can be used in a wide range of electrical applications and is most suitable for controlling electric power in low voltage and low current circuits. This type of FET can be used in applications like switch-mode power supplies, DC-DC converters, and power management circuits. It can also be used as a switch in circuits that require high reliability and high efficiency.In addition to its advantages mentioned above, the BSF134N10NJ3GXUMA1 also offers some other benefits, such as low conduction losses, low capacitances and low gate resistance. This, in turn, results in low power consumption, longer circuit life, and improved general performance of the circuit. Moreover, the low gate resistance of the BSF134N10NJ3GXUMA1 makes it ideal for use in high-density, high-side and low-side applications.The BSF134N10NJ3GXUMA1 is an efficient, effective, and reliable FET that offers a high level of performance for a variety of applications. With its wide range of uses and advantageous features, the BSF134N10NJ3GXUMA1 is an essential component for many power systems.

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