
Allicdata Part #: | BSL205NL6327HTSA1TR-ND |
Manufacturer Part#: |
BSL205NL6327HTSA1 |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Infineon Technologies |
Short Description: | MOSFET 2N-CH 20V 2.5A 6TSOP |
More Detail: | Mosfet Array 2 N-Channel (Dual) 20V 2.5A 500mW Sur... |
DataSheet: | ![]() |
Quantity: | 1000 |
1 +: | 0.00000 |
Vgs(th) (Max) @ Id: | 1.2V @ 11µA |
Base Part Number: | BSL205 |
Supplier Device Package: | PG-TSOP6-6 |
Package / Case: | SOT-23-6 Thin, TSOT-23-6 |
Mounting Type: | Surface Mount |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Power - Max: | 500mW |
Input Capacitance (Ciss) (Max) @ Vds: | 419pF @ 10V |
Gate Charge (Qg) (Max) @ Vgs: | 3.2nC @ 4.5V |
Series: | OptiMOS™ |
Rds On (Max) @ Id, Vgs: | 50 mOhm @ 2.5A, 4.5V |
Current - Continuous Drain (Id) @ 25°C: | 2.5A |
Drain to Source Voltage (Vdss): | 20V |
FET Feature: | Logic Level Gate |
FET Type: | 2 N-Channel (Dual) |
Part Status: | Obsolete |
Packaging: | Tape & Reel (TR) |
Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us: sales@allicdata.com
seleadBLS205NL6327HTSA1 ;The BSL205NL6327HTSA1 is a high-performance silicon-on-insulator (SOI) metal-oxide semiconductor field effect transistor (MOSFET) array consisting of seven n-channel enhancement-mode power MOSFETs.
The device is configured as two independent three-channel NMOS and two independent two-channel PMOS, with each channel capable of handling a maximum current of 37A and a maximum drain-source voltage of 600V. It has a threshold voltage of 4V. This MOSFET is suitable for designing high-speed switching applications such as automotive control modules, motor drives, and DC-DC converters.
BSL205NL6327HTSA1 is designed to provide high speed switching, low on-resistance, and low gate charge, making it an ideal choice for high-efficiency applications. It features low gate-reverse leakage current and high drain-gate capacitance for improved EMC performance. This MOSFET features an on-resistance of 19mΩ, making it suitable for applications requiring high current and low VF operation.
The device is packaged in an SO-8 package, which integrates the die into a single structure. This single structure reduces the board footprint and ensures compatibility with standard surface mount technology (SMT) assembly. The device is manufactured using advanced SOI technology, and is capable of operating at up to 175°C.
BSL205NL6327HTSA1 is designed to provide an alternative solution to power management applications, where conventional MOSFETs are not suitable. The device is suitable for use in automotive, industrial, and consumer applications. It can be used in a wide range of applications, such as motor control, power supplies, DC-DC converters, RF switching, and Intelligent Transportation System (ITS).
The BSL205NL6327HTSA1 working principle involves the application of a voltage or current to the gate of the circuit which allows a current to continuously flow from the drain to the source. The basic function of an MOSFET is to act as a switch, with the flow of current in the device being determined by the voltage applied to the gate. The amount of current flowing is proportional to the voltage at the gate. For the BSL205NL6327HTSA1, the gate voltage must be greater than the threshold voltage for current to flow.
The specific data is subject to PDF, and the above content is for reference
Part Number | Manufacturer | Price | Quantity | Description |
---|
BSL211SPT | Infineon Tec... | 0.0 $ | 1000 | MOSFET P-CH 20V 4.7A 6-TS... |
BSL207SPL6327HTSA1 | Infineon Tec... | 0.0 $ | 1000 | MOSFET P-CH 20V 6A 6-TSOP... |
BSL205NL6327HTSA1 | Infineon Tec... | 0.0 $ | 1000 | MOSFET 2N-CH 20V 2.5A 6TS... |
BSL205NH6327XTSA1 | Infineon Tec... | 0.15 $ | 1000 | MOSFET 2N-CH 20V 2.5A 6TS... |
BSL214NL6327HTSA1 | Infineon Tec... | 0.0 $ | 1000 | MOSFET 2N-CH 20V 1.5A 6TS... |
BSL211SPL6327HTSA1 | Infineon Tec... | 0.0 $ | 1000 | MOSFET P-CH 20V 4.7A TSOP... |
BSL202SNL6327HTSA1 | Infineon Tec... | 0.0 $ | 1000 | MOSFET N-CH 20V 7.5A TSOP... |
BSL207NL6327HTSA1 | Infineon Tec... | 0.0 $ | 1000 | MOSFET 2N-CH 20V 2.1A 6TS... |
BSL207SP | Infineon Tec... | -- | 1000 | MOSFET P-CH 20V 6A 6-TSOP... |
BSL215PL6327HTSA1 | Infineon Tec... | 0.0 $ | 1000 | MOSFET 2P-CH 20V 1.5A TSO... |
BSL215CH6327XTSA1 | Infineon Tec... | 0.16 $ | 1000 | MOSFET N/P-CH 20V 1.5A TS... |
BSL207NH6327XTSA1 | Infineon Tec... | 0.15 $ | 1000 | MOSFET 2N-CH 20V 2.1A 6TS... |
BSL214NH6327XTSA1 | Infineon Tec... | 0.14 $ | 1000 | MOSFET 2N-CH 20V 1.5A 6TS... |
BSL211SPH6327XTSA1 | Infineon Tec... | 0.16 $ | 3000 | MOSFET P-CH 20V 4.7A 6TSO... |
BSL207SPH6327XTSA1 | Infineon Tec... | 0.18 $ | 1000 | MOSFET P-CH 20V 6A 6TSOPP... |
BSL296SNH6327XTSA1 | Infineon Tec... | 0.21 $ | 1000 | MOSFET N-CH 100V 1.4A 6TS... |
BSL211SP | Infineon Tec... | -- | 1000 | MOSFET P-CH 20V 4.7A 6-TS... |
BSL215CL6327HTSA1 | Infineon Tec... | 0.0 $ | 1000 | MOSFET N/P-CH 20V 1.5A TS... |
BSL202SNH6327XTSA1 | Infineon Tec... | -- | 1000 | MOSFET N-CH 20V 7.5A 6TSO... |
MOSFET 2N-CH 30V 8AMosfet Array 2 N-Chan...

MOSFET 2N-CH 40V 6A 8PWRPAKMosfet Array ...

MOSFET 2P-CH 30V 5.8A 8SOICMosfet Array ...

MOSFET 2N-CH 80V 1.1A 8SOICMosfet Array ...

MOSFET 2N-CH 56LFPAKMosfet Array

MOSFET 2N-CH 30V 8SOICMosfet Array 2 N-C...
