BSL211SP Allicdata Electronics
Allicdata Part #:

BSL211SPINTR-ND

Manufacturer Part#:

BSL211SP

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: Infineon Technologies
Short Description: MOSFET P-CH 20V 4.7A 6-TSOP
More Detail: P-Channel 20V 4.7A (Ta) 2W (Ta) Surface Mount PG-T...
DataSheet: BSL211SP datasheetBSL211SP Datasheet/PDF
Quantity: 1000
Stock 1000Can Ship Immediately
Specifications
Vgs(th) (Max) @ Id: 1.2V @ 25µA
Package / Case: SOT-23-6 Thin, TSOT-23-6
Supplier Device Package: PG-TSOP6-6
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 2W (Ta)
FET Feature: --
Input Capacitance (Ciss) (Max) @ Vds: 654pF @ 15V
Vgs (Max): ±12V
Gate Charge (Qg) (Max) @ Vgs: 12.4nC @ 4.5V
Series: OptiMOS™
Rds On (Max) @ Id, Vgs: 67 mOhm @ 4.7A, 4.5V
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Current - Continuous Drain (Id) @ 25°C: 4.7A (Ta)
Drain to Source Voltage (Vdss): 20V
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Part Status: Obsolete
Packaging: Tape & Reel (TR) 
Description

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A BSL211SP is a part of a family of high frequency N-channel enhancement mode silicon gate field effect transistors. It is a single, high resistance device and is commonly used as a switch or in applications that require amplification and regulation of input signals. It can even be used as a noise generator or oscillator in radio-frequency applications. The BSL211SP is increasingly the go-to component for providing the level of electrical control needed in a variety of high-frequency applications.

The BLS211SP is a single transistor device and as such is not subject to the same level of cross-talk and noise that can happen with multi-transistor devices. This makes it ideal for use in applications where noise is a concern. Because it is a single component, it is also typically smaller and more energy efficient than multi-transistor devices. This can be important in certain applications, particularly those where component size and efficiency are concerns.

The BSL211SP is usually used with a complementary NPN transistor device such as a 2N3055. This configuration allows the two transistors to work together as a single device, improving the speed, control and accuracy of operations in the circuit. It is also possible to use a different P-channel device with the BSL211SP, but this is an odd setup and should be avoided in most cases.

The BSL211SP operates in the enhancement mode which means that it is turned off until a positive gate voltage is applied. The gate voltage can be set to make the BSL211SP start to conduct current when the voltage reaches a specified level. This can be used in applications such as switching, amplification and power regulation. The amount of current that can flow through the transistor can be changed by adjusting the gate voltage, so this can be useful for setting the gain of an amplifier or for controlling the amount of power available to a circuit.

The BSL211SP is typically used in high-frequency applications such as RF transmitters and high-speed digital signal processors. It is also often used in power regulation applications such as DC-DC converters. Its fast switching times, low power consumption and combination of speed and accuracy make it a great choice for many different types of high-frequency applications.

In summary, the BSL211SP is a single N-channel enhancement mode silicon gate field effect transistor. It can be used as a switch, amplifier, power regulator or oscillator in high-frequency applications. Because it is a single component, it is typically smaller and more energy efficient than multi-transistor devices. It is often used in combination with a complementary NPN transistor to improve the speed, control and accuracy of operations in the circuit.

The specific data is subject to PDF, and the above content is for reference

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