BSL211SPT Allicdata Electronics
Allicdata Part #:

BSL211SPXTINTR-ND

Manufacturer Part#:

BSL211SPT

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: Infineon Technologies
Short Description: MOSFET P-CH 20V 4.7A 6-TSOP
More Detail: P-Channel 20V 4.7A (Ta) 2W (Ta) Surface Mount PG-T...
DataSheet: BSL211SPT datasheetBSL211SPT Datasheet/PDF
Quantity: 1000
1 +: 0.00000
Stock 1000Can Ship Immediately
$ 0
Specifications
Vgs(th) (Max) @ Id: 1.2V @ 25µA
Package / Case: SOT-23-6 Thin, TSOT-23-6
Supplier Device Package: PG-TSOP6-6
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 2W (Ta)
FET Feature: --
Input Capacitance (Ciss) (Max) @ Vds: 654pF @ 15V
Vgs (Max): ±12V
Gate Charge (Qg) (Max) @ Vgs: 12.4nC @ 4.5V
Series: OptiMOS™
Rds On (Max) @ Id, Vgs: 67 mOhm @ 4.7A, 4.5V
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Current - Continuous Drain (Id) @ 25°C: 4.7A (Ta)
Drain to Source Voltage (Vdss): 20V
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Part Status: Obsolete
Packaging: Tape & Reel (TR) 
Description

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BSL 211SPT is an N-channel MOSFET (transistor-field-effect transistor) manufacturing technology by Rohm Semiconductor, Inc.The BSL 211SPT is a low on-resistance, high-speed MOSFET. It is an N-channel MOSFET with a voltage rating of -100V and an on-resistance rating of just 1.4 milliOhms. The low on-resistance and high speed of this device make it suitable for lightly loaded, high-speed switching and amplification applications.The main applications of the BSL 211SPT are as a switch in power management and battery management ICs, e-motors and MOSFET relays. It can also be used in wireless communication equipment, inverters and power converters, AC/DC adapter applications, and as an amplifier in audio power amplifiers and audio systems.The BSL 211SPT works on the principle of the mosfet or Metal-Oxide-Semiconductor field effect transistor. In this type of device, a voltage applied between the drain and the gate of the MOSFET induces a current flow between the source and the drain. The MOSFET is constructed in such a way that, at the point of the gate, a thin insulating layer of gate oxide prevents the gate current from causing current to flow in the MOSFET. This, in turn, allows one to control the on-resistance and the voltage across the MOSFET without having to increase the current flow.The key features of the BSL 211SPT include high-speed switching (up to 1GHz), low on-resistance of 1.4 milliOhms, low-threshold voltage, and low noise. Additionally, the MOSFET can be used in moderate-current, low-power applications with a low-saturation voltage, a small on-resistance increases, low gate-drain capacitance, and a very high breakdown voltage.The BSL 211SPT is ideal for use in a wide array of electronic applications. Its low on-resistance and high-speed switching allow it to be used in many applications requiring high efficiency, high speed, and low power consumption. Additionally, due to its low-threshold voltage, the BSL 211SPT can be used in circuits that require a minimum operating voltage. Its low noise makes it suitable for use in audio applications, while its low-saturation voltage makes it ideal for use in battery management and power converters.In summary, the BSL 211SPT is an excellent choice for a variety of applications, including wireless communication, power management and battery management, AC/DC adapter applications, and audio applications. Its low on-resistance ratings and high-speed switching capabilities make it a great choice for many projects. Additionally, due to its low-threshold voltage, the BSL 211SPT can be used in circuits that require a minimum operating voltage. Finally, its low saturation voltage makes it ideal for use in battery management and power converters. With the variety of applications available to the BSL 211SPT, it is sure to be a device that will meet the needs of many engineers.

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