
Allicdata Part #: | BSM200GA120DLCHOSA1-ND |
Manufacturer Part#: |
BSM200GA120DLCHOSA1 |
Price: | $ 88.26 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Infineon Technologies |
Short Description: | IGBT 2 MED POWER 62MM-2 |
More Detail: | IGBT Module Single 1200V 370A 1450W Chassis Mount... |
DataSheet: | ![]() |
Quantity: | 1000 |
10 +: | $ 80.23960 |
Series: | -- |
Part Status: | Not For New Designs |
IGBT Type: | -- |
Configuration: | Single |
Voltage - Collector Emitter Breakdown (Max): | 1200V |
Current - Collector (Ic) (Max): | 370A |
Power - Max: | 1450W |
Vce(on) (Max) @ Vge, Ic: | 2.6V @ 15V, 200A |
Current - Collector Cutoff (Max): | 5mA |
Input Capacitance (Cies) @ Vce: | 13nF @ 25V |
Input: | Standard |
NTC Thermistor: | No |
Operating Temperature: | -40°C ~ 125°C |
Mounting Type: | Chassis Mount |
Package / Case: | Module |
Supplier Device Package: | Module |
Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us: sales@allicdata.com
IGBT (Insulated Gate Bipolar Transistor) is an advanced type of solid-state switching device that combines the functions of both a bipolar transistor and a field effect transistor. It is one of the most versatile semiconductor devices available in today’s market. This particular IGBT Module, BSM200GA120DLCHOSA1, is a 200A/1200V module that is widely used in various industrial and commercial applications.
Applications
BSM200GA120DLCHOSA1 Module is a preferred choice for general purpose motor control, PFC Applications, lighting, solar and wind power applications, UPS and SMPS circuits, automotive auxiliary power injection, traction and railway applications, frequency converters and various others. The module is also widely used in 3 Phase applications that require a higher power rating. It has been designed in a way that it can be connected directly to the PCB without any extra components.
The unique feature of this IGBT module is that it has two isolated pins which can be used to control different zones separately. This is useful in applications such as street lighting where different zones can be dimmed or controlled separately.
Working Principle
As mentioned above, BSM200GA120DLCHOSA1 is an advanced type of switching device that combines the functions of both a bipolar transistor and a field effect transistor. It works on the principle of PNPN (negative-positive-negative-positive) switching, and thus, it switches the current flow whenever a specific voltage or current is applied to the Gate Pin. When a voltage or current is applied to the Gate Pin, the N-type layer and P-type layer form an interface (channel) to allow the flow of current from Collector to Emitter. When the voltage or current is removed from Gate Pin, the N-type layer and P-type layer will separate and the current flow stops.
The advantage of this IGBT module over traditional switching devices is that it can control both high-voltage and high-current applications with ease. It is also capable of operating at very high frequencies, which makes it suitable for power applications such as AC drives, SMPS and variable speed applications.
Conclusion
The BSM200GA120DLCHOSA1 IGBT Module is an advanced switching device that is used in many industrial and commercial applications. It combines the functions of both a bipolar transistor and a field effect transistor, and it works on the principle of PNPN switching. It is capable of controlling both high voltage and high current applications with ease, and it is suitable for applications such as AC drives, SMPS and variable speed applications. This IGBT module is widely used in various industrial and commercial applications.
The specific data is subject to PDF, and the above content is for reference
Part Number | Manufacturer | Price | Quantity | Description |
---|
BSM200GB120DLCHOSA1 | Infineon Tec... | 121.9 $ | 1000 | IGBT 2 MED POWER 62MM-1IG... |
BSM200GB120DN2HOSA1 | Infineon Tec... | 130.06 $ | 1000 | IGBT 2 MED POWER 62MM-1IG... |
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