Allicdata Part #: | BSM25GD120DN2BOSA1-ND |
Manufacturer Part#: |
BSM25GD120DN2BOSA1 |
Price: | $ 63.46 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Infineon Technologies |
Short Description: | IGBT 2 LOW POWER ECONO2-2 |
More Detail: | IGBT Module Full Bridge 1200V 35A 200W Chassis Mo... |
DataSheet: | BSM25GD120DN2BOSA1 Datasheet/PDF |
Quantity: | 1000 |
10 +: | $ 57.69100 |
Series: | -- |
Part Status: | Not For New Designs |
IGBT Type: | -- |
Configuration: | Full Bridge |
Voltage - Collector Emitter Breakdown (Max): | 1200V |
Current - Collector (Ic) (Max): | 35A |
Power - Max: | 200W |
Vce(on) (Max) @ Vge, Ic: | 3V @ 15V, 25A |
Current - Collector Cutoff (Max): | 800µA |
Input Capacitance (Cies) @ Vce: | 1.65nF @ 25V |
Input: | Standard |
NTC Thermistor: | No |
Operating Temperature: | 150°C (TJ) |
Mounting Type: | Chassis Mount |
Package / Case: | Module |
Supplier Device Package: | Module |
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The BSM25GD120DN2BOSA1 is a module IGBT that is widely used in a variety of electronic appliances. It comprises of two IGBTs, one diode, and a combined gate driver with integrated bootstrap diode and resistor. The device has wide range of voltage ratings with a maximum blocking voltage of 1600V. The voltage rating can be changed by varying the Di/DT of IGBT’s and diodes.
The main application of the BSM25GD120DN2BOSA1 is for AC and DC motor drives, type of DC/DC converters, servers and power supplies, UPS, solar converters, and wind turbines. It has a variety of ratings and can be used in a range of environments.
The working principle of the BSM25GD120DN2BOSA1 is similar to other IGBTs. It uses two IGBTs as the main power switching device and the diode acts as a reverse conduction diode. The integrated gate driver is responsible for driving the power switching device. In addition, the integrated bootstrap diode and resistor are used to provide the necessary gate drive voltage to the IGBTs.
The BSM25GD120DN2BOSA1 module has a number of features that make it suitable for a wide range of applications. It has a low-resistance collector-emitter, which is important for obtaining good switching efficiency and low switching noise. The design is also optimized for low power dissipation, reducing the overall control power required for drive circuits. Furthermore, it features overcurrent detection, temperature sensing and shutdown protection to ensure its safe operation.
The BSM25GD120DN2BOSA1 has a very wide range of voltage ratings, allowing it to be used in a wide range of applications. Its overall design is optimized for excellent reliability and long lifetime even in harsh environmental conditions. In addition, it has low gate drive power requirements, making it suitable for applications that require low power consumption.
Overall, the BSM25GD120DN2BOSA1 is a high-performance IGBT module that offers a wide range of applications. It is a dependable and reliable power switching device that can be used in a variety of applications. Furthermore, its wide range of voltage ratings makes it suitable for a variety of environments.
The specific data is subject to PDF, and the above content is for reference
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