Allicdata Part #: | BSM25GD120DN2E3224BOSA1-ND |
Manufacturer Part#: |
BSM25GD120DN2E3224BOSA1 |
Price: | $ 63.46 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Infineon Technologies |
Short Description: | IGBT 2 LOW POWER ECONO2-2 |
More Detail: | IGBT Module Three Phase Inverter 1200V 35A 200W C... |
DataSheet: | BSM25GD120DN2E3224BOSA1 Datasheet/PDF |
Quantity: | 1000 |
10 +: | $ 57.69100 |
Series: | -- |
Part Status: | Not For New Designs |
IGBT Type: | -- |
Configuration: | Three Phase Inverter |
Voltage - Collector Emitter Breakdown (Max): | 1200V |
Current - Collector (Ic) (Max): | 35A |
Power - Max: | 200W |
Vce(on) (Max) @ Vge, Ic: | 3V @ 15V, 25A |
Current - Collector Cutoff (Max): | 800µA |
Input Capacitance (Cies) @ Vce: | 1.65nF @ 25V |
Input: | Standard |
NTC Thermistor: | No |
Operating Temperature: | 150°C (TJ) |
Mounting Type: | Chassis Mount |
Package / Case: | Module |
Supplier Device Package: | Module |
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BSM25GD120DN2E3224BOSA1 application field and working principle
BSM25GD120DN2E3224BOSA1 is a three level insulated metal–oxide–semiconductor field–effect transistor (MOSFET) module using IGBT4 technology, which provides improved performance, high-speed switching, and improved efficiency. It is widely used in industrial and domestic applications such as motor drives, power converters, power amplifiers, power supplies, and other medium to high power applications.
The working principle of IGBT modules is based on the principle of junction field–effect transistor (JFET), an insulated gate–type transistor that uses a metal–oxide–semiconductor (MOS) structure to control the flow of current in the device. The IGBT is a four-terminal device composed of an oxide–insulated gate and a conductive base layer. The gate–base-junction acts as a current control element, and when the voltage between the gate and source is increased, the current in the devices rises steeply. The voltage applied to the gate will also control the amount of current flow through the device.
IGBT modules provide high temperature operation, superior switching performance, low operating loss and high reliability. The device also has a number of features including dynamic turn-off, temperature stability, and anti-parallel diode protection. IGBT modules offer a higher degree of surge protection than standard MOSFETs, and are suitable for high power switching applications. Furthermore, they are capable of operating at higher temperatures than traditional transistors, and require less cooling.
BSM25GD120DN2E3224BOSA1 is a three-level IGBT module with a maximum current rating of 120 A. It is a fully molded IGBT module featuring a mounting clip, which allows simple and fast mounting and removal. The module also features a built-in circuit protection device to prevent over current or overvoltage conditions from occurring.
BSM25GD120DN2E3224BOSA1 is an ideal device for a broad range of applications including motor control, motion control, AC servos, renewable energy, UPS, battery charging and welding. It is suitable for a variety of industrial and consumer applications in medium to high power ranges.
BSM25GD120DN2E3224BOSA1 provides outstanding performance in critical applications where reliability, high current, and high temperature are required. It is designed to work with a wide range of gate drivers and provides superior protection against short circuits, overloads, and overvoltage conditions. With its improved performance and superior protection, BSM25GD120DN2E3224BOSA1 is an ideal choice for motor drives, power supplies, AC servos, and power converters.
The specific data is subject to PDF, and the above content is for reference
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